GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate

Yousuke Kuwahara; Takahiro Fujii; Toru Sugiyama; Daisuke Iida; Yasuhiro Isobe; Yasuharu Fujiyama; Yoshiki Morita; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki; Hiroshi Amano

doi:10.1143/APEX.4.021001

GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate

Yousuke Kuwahara, Takahiro Fujii, Toru Sugiyama, Daisuke Iida, Yasuhiro Isobe, Yasuharu Fujiyama, Yoshiki Morita, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

Research output: Contribution to journal › Article › peer-review

91 Scopus citations

Abstract

High-performance GaInN-based solar cells with high open-circuit voltage, high short-circuit current density, and good fill factor have been obtained using a combination of two different GaInN superlattice structures. The GaInN barrier thicknesses (3 and 0.6 nm) in both superlattice structures were optimized, resulting in a thick GaInN-based active layer with a low pit density in the device. The conversion efficiency is approximately 2.5% under a solar simulator of air mass 1.5G and an irradiation intensity of 155 mW/cm 2. © 2011 The Japan Society of Applied Physics.

Original language	English (US)
Journal	APPLIED PHYSICS EXPRESS
Volume	4
Issue number	2
DOIs	https://doi.org/10.1143/APEX.4.021001
State	Published - Feb 1 2011
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

General Physics and Astronomy
General Engineering

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10.1143/APEX.4.021001

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title = "GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate",

abstract = "High-performance GaInN-based solar cells with high open-circuit voltage, high short-circuit current density, and good fill factor have been obtained using a combination of two different GaInN superlattice structures. The GaInN barrier thicknesses (3 and 0.6 nm) in both superlattice structures were optimized, resulting in a thick GaInN-based active layer with a low pit density in the device. The conversion efficiency is approximately 2.5% under a solar simulator of air mass 1.5G and an irradiation intensity of 155 mW/cm 2. {\textcopyright} 2011 The Japan Society of Applied Physics.",

author = "Yousuke Kuwahara and Takahiro Fujii and Toru Sugiyama and Daisuke Iida and Yasuhiro Isobe and Yasuharu Fujiyama and Yoshiki Morita and Motoaki Iwaya and Tetsuya Takeuchi and Satoshi Kamiyama and Isamu Akasaki and Hiroshi Amano",

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language = "English (US)",

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T1 - GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate

AU - Kuwahara, Yousuke

AU - Fujii, Takahiro

AU - Sugiyama, Toru

AU - Iida, Daisuke

AU - Isobe, Yasuhiro

AU - Fujiyama, Yasuharu

AU - Morita, Yoshiki

AU - Iwaya, Motoaki

AU - Takeuchi, Tetsuya

AU - Kamiyama, Satoshi

AU - Akasaki, Isamu

AU - Amano, Hiroshi

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2011/2/1

Y1 - 2011/2/1

N2 - High-performance GaInN-based solar cells with high open-circuit voltage, high short-circuit current density, and good fill factor have been obtained using a combination of two different GaInN superlattice structures. The GaInN barrier thicknesses (3 and 0.6 nm) in both superlattice structures were optimized, resulting in a thick GaInN-based active layer with a low pit density in the device. The conversion efficiency is approximately 2.5% under a solar simulator of air mass 1.5G and an irradiation intensity of 155 mW/cm 2. © 2011 The Japan Society of Applied Physics.

AB - High-performance GaInN-based solar cells with high open-circuit voltage, high short-circuit current density, and good fill factor have been obtained using a combination of two different GaInN superlattice structures. The GaInN barrier thicknesses (3 and 0.6 nm) in both superlattice structures were optimized, resulting in a thick GaInN-based active layer with a low pit density in the device. The conversion efficiency is approximately 2.5% under a solar simulator of air mass 1.5G and an irradiation intensity of 155 mW/cm 2. © 2011 The Japan Society of Applied Physics.

UR - https://iopscience.iop.org/article/10.1143/APEX.4.021001

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DO - 10.1143/APEX.4.021001

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IS - 2

ER -

GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate

Abstract

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ASJC Scopus subject areas

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