GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate

Yousuke Kuwahara, Takahiro Fujii, Toru Sugiyama, Daisuke Iida, Yasuhiro Isobe, Yasuharu Fujiyama, Yoshiki Morita, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

Research output: Contribution to journalArticlepeer-review

90 Scopus citations

Abstract

High-performance GaInN-based solar cells with high open-circuit voltage, high short-circuit current density, and good fill factor have been obtained using a combination of two different GaInN superlattice structures. The GaInN barrier thicknesses (3 and 0.6 nm) in both superlattice structures were optimized, resulting in a thick GaInN-based active layer with a low pit density in the device. The conversion efficiency is approximately 2.5% under a solar simulator of air mass 1.5G and an irradiation intensity of 155 mW/cm 2. © 2011 The Japan Society of Applied Physics.
Original languageEnglish (US)
JournalAPPLIED PHYSICS EXPRESS
Volume4
Issue number2
DOIs
StatePublished - Feb 1 2011
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

  • General Physics and Astronomy
  • General Engineering

Fingerprint

Dive into the research topics of 'GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate'. Together they form a unique fingerprint.

Cite this