GaInN-based solar cells using GaInN/GaInN superlattices

Takahiro Fujii, Yousuke Kuwahara, Daisuke Iida, Yasuharu Fujiyama, Yoshiki Morita, Toru Sugiyama, Yasuhiro Isobe, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We report on the fabrication of GaInN-based solar cells using GaInN/GaInN superlattices as active layers and also as underlying layers beneath the active layers. We obtained pit-free surfaces, even with a high InN molar fraction, using the superlattices. As a result, the maximum external and internal quantum efficiencies reached 60%, and 88%, respectively. The open-circuit voltage of the soalr cells was 1.77 V, the short-circuit current density was 3.08 mA/cm2, and the fill factor was 70.3%. A conversion efficiency of 2.46% was achieved at room temperature under simulared 1.5 sun × AM1.5G illumination using a solar simulator. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish (US)
Pages (from-to)2463-2465
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number7-8
StatePublished - Jul 1 2011
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

  • Condensed Matter Physics


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