GaInN-based solar cells using GaInN/GaInN superlattices

Takahiro Fujii; Yousuke Kuwahara; Daisuke Iida; Yasuharu Fujiyama; Yoshiki Morita; Toru Sugiyama; Yasuhiro Isobe; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki; Hiroshi Amano

doi:10.1002/pssc.201001152

GaInN-based solar cells using GaInN/GaInN superlattices

Takahiro Fujii, Yousuke Kuwahara, Daisuke Iida, Yasuharu Fujiyama, Yoshiki Morita, Toru Sugiyama, Yasuhiro Isobe, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report on the fabrication of GaInN-based solar cells using GaInN/GaInN superlattices as active layers and also as underlying layers beneath the active layers. We obtained pit-free surfaces, even with a high InN molar fraction, using the superlattices. As a result, the maximum external and internal quantum efficiencies reached 60%, and 88%, respectively. The open-circuit voltage of the soalr cells was 1.77 V, the short-circuit current density was 3.08 mA/cm2, and the fill factor was 70.3%. A conversion efficiency of 2.46% was achieved at room temperature under simulared 1.5 sun × AM1.5G illumination using a solar simulator. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	2463-2465
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	8
Issue number	7-8
DOIs	https://doi.org/10.1002/pssc.201001152
State	Published - Jul 1 2011
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Condensed Matter Physics

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title = "GaInN-based solar cells using GaInN/GaInN superlattices",

abstract = "We report on the fabrication of GaInN-based solar cells using GaInN/GaInN superlattices as active layers and also as underlying layers beneath the active layers. We obtained pit-free surfaces, even with a high InN molar fraction, using the superlattices. As a result, the maximum external and internal quantum efficiencies reached 60%, and 88%, respectively. The open-circuit voltage of the soalr cells was 1.77 V, the short-circuit current density was 3.08 mA/cm2, and the fill factor was 70.3%. A conversion efficiency of 2.46% was achieved at room temperature under simulared 1.5 sun × AM1.5G illumination using a solar simulator. {\textcopyright} 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

author = "Takahiro Fujii and Yousuke Kuwahara and Daisuke Iida and Yasuharu Fujiyama and Yoshiki Morita and Toru Sugiyama and Yasuhiro Isobe and Motoaki Iwaya and Tetsuya Takeuchi and Satoshi Kamiyama and Isamu Akasaki and Hiroshi Amano",

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doi = "10.1002/pssc.201001152",

language = "English (US)",

volume = "8",

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journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

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TY - JOUR

T1 - GaInN-based solar cells using GaInN/GaInN superlattices

AU - Fujii, Takahiro

AU - Kuwahara, Yousuke

AU - Iida, Daisuke

AU - Fujiyama, Yasuharu

AU - Morita, Yoshiki

AU - Sugiyama, Toru

AU - Isobe, Yasuhiro

AU - Iwaya, Motoaki

AU - Takeuchi, Tetsuya

AU - Kamiyama, Satoshi

AU - Akasaki, Isamu

AU - Amano, Hiroshi

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2011/7/1

Y1 - 2011/7/1

N2 - We report on the fabrication of GaInN-based solar cells using GaInN/GaInN superlattices as active layers and also as underlying layers beneath the active layers. We obtained pit-free surfaces, even with a high InN molar fraction, using the superlattices. As a result, the maximum external and internal quantum efficiencies reached 60%, and 88%, respectively. The open-circuit voltage of the soalr cells was 1.77 V, the short-circuit current density was 3.08 mA/cm2, and the fill factor was 70.3%. A conversion efficiency of 2.46% was achieved at room temperature under simulared 1.5 sun × AM1.5G illumination using a solar simulator. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We report on the fabrication of GaInN-based solar cells using GaInN/GaInN superlattices as active layers and also as underlying layers beneath the active layers. We obtained pit-free surfaces, even with a high InN molar fraction, using the superlattices. As a result, the maximum external and internal quantum efficiencies reached 60%, and 88%, respectively. The open-circuit voltage of the soalr cells was 1.77 V, the short-circuit current density was 3.08 mA/cm2, and the fill factor was 70.3%. A conversion efficiency of 2.46% was achieved at room temperature under simulared 1.5 sun × AM1.5G illumination using a solar simulator. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssc.201001152

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DO - 10.1002/pssc.201001152

M3 - Article

SN - 1862-6351

VL - 8

SP - 2463

EP - 2465

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 7-8

ER -

GaInN-based solar cells using GaInN/GaInN superlattices

Abstract

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