Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition

Gaoqiang Deng; Lidong Zhang; Yang Wang; Jiaqi Yu; Yunfei Niu; Haotian Qian; Xiaohang Li; Zhifeng Shi; Yuantao Zhang

doi:10.1016/j.micrna.2022.207191

Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition

Gaoqiang Deng, Lidong Zhang, Yang Wang, Jiaqi Yu, Yunfei Niu, Haotian Qian, Xiaohang Li, Zhifeng Shi, Yuantao Zhang

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this paper, we have demonstrated that Ga-free AlInN can be obtained in the close-coupled showerhead (CCS) reactor metalorganic chemical vapor deposition (MOCVD) system when thorough cleaning was applied. For the AlInN films grown in the CCS reactor routinely used, the serious unintentional incorporation of gallium (Ga) atoms in AlInN was confirmed by the measurement results of secondary ion mass spectroscopy. To avoid the Ga incorporation, we removed the Ga-contained coatings on the surface of quartz liner, wafer susceptor, and showerhead. Then, in the reactor without Ga-contained coatings, Ga-free AlInN films were obtained. Moreover, the effect of growth parameters on the indium incorporation in AlInN and the structural properties of AlInN were studied systematically. It is worth noting that the realization of Ga-free AlInN in the CCS reactor is significantly important because CCS MOCVD system is widely used for the research and mass production of nitride materials and devices.

Original language	English (US)
Pages (from-to)	207191
Journal	Micro and Nanostructures
Volume	165
DOIs	https://doi.org/10.1016/j.micrna.2022.207191
State	Published - Jun 3 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-07-01
Acknowledgements: This work was supported by the National Key R&D Program of China (Nos.2021YFB3601000, 2021YFB3601002), the National Natural Science Foundation of China (Nos. 62074069, 61734001, and 62104078), the Science and Technology Developing Project of Jilin Province (No. 20200801013 GH), and the Fundamental Research Funds for the Central Universities.

Access to Document

10.1016/j.micrna.2022.207191

Cite this

@article{4298245b3a164c0dbd14e4136b9e1d8d,

title = "Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition",

abstract = "In this paper, we have demonstrated that Ga-free AlInN can be obtained in the close-coupled showerhead (CCS) reactor metalorganic chemical vapor deposition (MOCVD) system when thorough cleaning was applied. For the AlInN films grown in the CCS reactor routinely used, the serious unintentional incorporation of gallium (Ga) atoms in AlInN was confirmed by the measurement results of secondary ion mass spectroscopy. To avoid the Ga incorporation, we removed the Ga-contained coatings on the surface of quartz liner, wafer susceptor, and showerhead. Then, in the reactor without Ga-contained coatings, Ga-free AlInN films were obtained. Moreover, the effect of growth parameters on the indium incorporation in AlInN and the structural properties of AlInN were studied systematically. It is worth noting that the realization of Ga-free AlInN in the CCS reactor is significantly important because CCS MOCVD system is widely used for the research and mass production of nitride materials and devices.",

author = "Gaoqiang Deng and Lidong Zhang and Yang Wang and Jiaqi Yu and Yunfei Niu and Haotian Qian and Xiaohang Li and Zhifeng Shi and Yuantao Zhang",

note = "KAUST Repository Item: Exported on 2022-07-01 Acknowledgements: This work was supported by the National Key R&D Program of China (Nos.2021YFB3601000, 2021YFB3601002), the National Natural Science Foundation of China (Nos. 62074069, 61734001, and 62104078), the Science and Technology Developing Project of Jilin Province (No. 20200801013 GH), and the Fundamental Research Funds for the Central Universities.",

year = "2022",

month = jun,

day = "3",

doi = "10.1016/j.micrna.2022.207191",

language = "English (US)",

volume = "165",

pages = "207191",

journal = "Micro and Nanostructures",

issn = "2773-0123",

publisher = "Academic Press Inc.",

}

TY - JOUR

T1 - Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition

AU - Deng, Gaoqiang

AU - Zhang, Lidong

AU - Wang, Yang

AU - Yu, Jiaqi

AU - Niu, Yunfei

AU - Qian, Haotian

AU - Li, Xiaohang

AU - Shi, Zhifeng

AU - Zhang, Yuantao

N1 - KAUST Repository Item: Exported on 2022-07-01 Acknowledgements: This work was supported by the National Key R&D Program of China (Nos.2021YFB3601000, 2021YFB3601002), the National Natural Science Foundation of China (Nos. 62074069, 61734001, and 62104078), the Science and Technology Developing Project of Jilin Province (No. 20200801013 GH), and the Fundamental Research Funds for the Central Universities.

PY - 2022/6/3

Y1 - 2022/6/3

N2 - In this paper, we have demonstrated that Ga-free AlInN can be obtained in the close-coupled showerhead (CCS) reactor metalorganic chemical vapor deposition (MOCVD) system when thorough cleaning was applied. For the AlInN films grown in the CCS reactor routinely used, the serious unintentional incorporation of gallium (Ga) atoms in AlInN was confirmed by the measurement results of secondary ion mass spectroscopy. To avoid the Ga incorporation, we removed the Ga-contained coatings on the surface of quartz liner, wafer susceptor, and showerhead. Then, in the reactor without Ga-contained coatings, Ga-free AlInN films were obtained. Moreover, the effect of growth parameters on the indium incorporation in AlInN and the structural properties of AlInN were studied systematically. It is worth noting that the realization of Ga-free AlInN in the CCS reactor is significantly important because CCS MOCVD system is widely used for the research and mass production of nitride materials and devices.

AB - In this paper, we have demonstrated that Ga-free AlInN can be obtained in the close-coupled showerhead (CCS) reactor metalorganic chemical vapor deposition (MOCVD) system when thorough cleaning was applied. For the AlInN films grown in the CCS reactor routinely used, the serious unintentional incorporation of gallium (Ga) atoms in AlInN was confirmed by the measurement results of secondary ion mass spectroscopy. To avoid the Ga incorporation, we removed the Ga-contained coatings on the surface of quartz liner, wafer susceptor, and showerhead. Then, in the reactor without Ga-contained coatings, Ga-free AlInN films were obtained. Moreover, the effect of growth parameters on the indium incorporation in AlInN and the structural properties of AlInN were studied systematically. It is worth noting that the realization of Ga-free AlInN in the CCS reactor is significantly important because CCS MOCVD system is widely used for the research and mass production of nitride materials and devices.

UR - http://hdl.handle.net/10754/679518

UR - https://linkinghub.elsevier.com/retrieve/pii/S2773012322000048

UR - http://www.scopus.com/inward/record.url?scp=85132588293&partnerID=8YFLogxK

U2 - 10.1016/j.micrna.2022.207191

DO - 10.1016/j.micrna.2022.207191

M3 - Article

SN - 2773-0123

VL - 165

SP - 207191

JO - Micro and Nanostructures

JF - Micro and Nanostructures

ER -

Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this