TY - CHAP
T1 - Future Aspects of MOCVD Technology for Epitaxial Growth of Semiconductors
AU - Detchprohm, T.
AU - Ryou, J.-H.
AU - Li, Xiaohang
AU - Dupuis, R.D.
N1 - KAUST Repository Item: Exported on 2021-03-02
PY - 2019/8/30
Y1 - 2019/8/30
N2 - This chapter explores the characteristics of metalorganic chemical vapor deposition (MOCVD) and discusses possible future trends in the development and application of this epitaxial materials technology to future electronic and optoelectronic devices. It focuses on the needs of different III-nitride materials and devices as examples to describe the state-of-the-art and emerging MOCVD technologies. In addition, the chapter discusses MOCVD innovation for emerging related materials such as Ga2O3. The II-VI compound semiconductors discussed in the chapter are formed by the Group 12 elements Zn, Cd, and Hg, and the Group 16 elements S, Se, and Te. Extrapolating from the recent past, it is relatively easy to predict the continued expansion of MOCVD materials grown for both research and commercial applications. The chapter addresses some specific commercial device applications of MOCVD-grown materials.
AB - This chapter explores the characteristics of metalorganic chemical vapor deposition (MOCVD) and discusses possible future trends in the development and application of this epitaxial materials technology to future electronic and optoelectronic devices. It focuses on the needs of different III-nitride materials and devices as examples to describe the state-of-the-art and emerging MOCVD technologies. In addition, the chapter discusses MOCVD innovation for emerging related materials such as Ga2O3. The II-VI compound semiconductors discussed in the chapter are formed by the Group 12 elements Zn, Cd, and Hg, and the Group 16 elements S, Se, and Te. Extrapolating from the recent past, it is relatively easy to predict the continued expansion of MOCVD materials grown for both research and commercial applications. The chapter addresses some specific commercial device applications of MOCVD-grown materials.
UR - http://hdl.handle.net/10754/667775
UR - https://onlinelibrary.wiley.com/doi/abs/10.1002/9781119313021.ch14
U2 - 10.1002/9781119313021.ch14
DO - 10.1002/9781119313021.ch14
M3 - Chapter
SN - 9781119313014
SP - 507
EP - 548
BT - Metalorganic Vapor Phase Epitaxy (MOVPE)
PB - Wiley
ER -