Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors

Ali H. Hassan; Mrinal Kanti Hota; Fwzah Hamud Alshammari; Husam N. Alshareef; Khaled N. Salama

doi:10.1002/aelm.201901083

Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors

Ali H. Hassan, Mrinal Kanti Hota, Fwzah Hamud Alshammari, Husam N. Alshareef, Khaled N. Salama

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Using one binary oxide, a fully transparent thin-film transistor (TFT)-based transceiver circuit is presented. The proposed transceiver circuit is fabricated entirely using an atomic layer deposition process. Moreover, the proposed circuit presents two modulation schemes: frequency shift keying and ON/OFF keying. The fabricated TFTs exhibit saturation mobility, threshold voltage, a subthreshold swing, and an ON/OFF ratio of 18.2 cm2 V−1 s−1, 0.9 V, 419 mVdec−1, and 109 times, respectively. Finally, the circuit functionality is demonstrated by the word “KAUST” as a Morse code.

Original language	English (US)
Pages (from-to)	1901083
Journal	Advanced Electronic Materials
DOIs	https://doi.org/10.1002/aelm.201901083
State	Published - Feb 3 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Research reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also thank the core laboratory staff and the imaging and characterization staff at KAUST. A.H.H. and M.K.H. contributed equally to this work.

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10.1002/aelm.201901083

https://repository.kaust.edu.sa/bitstream/10754/661494/1/Ali%20et%20al%20acepted%20version%20for%20KAUST%20Repository.pdf

Cite this

@article{45b2e57ea8234122a2070336b4236a58,

title = "Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors",

abstract = "Using one binary oxide, a fully transparent thin-film transistor (TFT)-based transceiver circuit is presented. The proposed transceiver circuit is fabricated entirely using an atomic layer deposition process. Moreover, the proposed circuit presents two modulation schemes: frequency shift keying and ON/OFF keying. The fabricated TFTs exhibit saturation mobility, threshold voltage, a subthreshold swing, and an ON/OFF ratio of 18.2 cm2 V−1 s−1, 0.9 V, 419 mVdec−1, and 109 times, respectively. Finally, the circuit functionality is demonstrated by the word “KAUST” as a Morse code.",

author = "Hassan, {Ali H.} and Hota, {Mrinal Kanti} and Alshammari, {Fwzah Hamud} and Alshareef, {Husam N.} and Salama, {Khaled N.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Research reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also thank the core laboratory staff and the imaging and characterization staff at KAUST. A.H.H. and M.K.H. contributed equally to this work.",

year = "2020",

month = feb,

day = "3",

doi = "10.1002/aelm.201901083",

language = "English (US)",

pages = "1901083",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-VCH Verlag",

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T1 - Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors

AU - Hassan, Ali H.

AU - Hota, Mrinal Kanti

AU - Alshammari, Fwzah Hamud

AU - Alshareef, Husam N.

AU - Salama, Khaled N.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Research reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also thank the core laboratory staff and the imaging and characterization staff at KAUST. A.H.H. and M.K.H. contributed equally to this work.

PY - 2020/2/3

Y1 - 2020/2/3

N2 - Using one binary oxide, a fully transparent thin-film transistor (TFT)-based transceiver circuit is presented. The proposed transceiver circuit is fabricated entirely using an atomic layer deposition process. Moreover, the proposed circuit presents two modulation schemes: frequency shift keying and ON/OFF keying. The fabricated TFTs exhibit saturation mobility, threshold voltage, a subthreshold swing, and an ON/OFF ratio of 18.2 cm2 V−1 s−1, 0.9 V, 419 mVdec−1, and 109 times, respectively. Finally, the circuit functionality is demonstrated by the word “KAUST” as a Morse code.

AB - Using one binary oxide, a fully transparent thin-film transistor (TFT)-based transceiver circuit is presented. The proposed transceiver circuit is fabricated entirely using an atomic layer deposition process. Moreover, the proposed circuit presents two modulation schemes: frequency shift keying and ON/OFF keying. The fabricated TFTs exhibit saturation mobility, threshold voltage, a subthreshold swing, and an ON/OFF ratio of 18.2 cm2 V−1 s−1, 0.9 V, 419 mVdec−1, and 109 times, respectively. Finally, the circuit functionality is demonstrated by the word “KAUST” as a Morse code.

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UR - https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201901083

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M3 - Article

SN - 2199-160X

SP - 1901083

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

ER -

Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors

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