Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors

Ali H. Hassan, Mrinal Kanti Hota, Fwzah Hamud Alshammari, Husam N. Alshareef, Khaled N. Salama

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Using one binary oxide, a fully transparent thin-film transistor (TFT)-based transceiver circuit is presented. The proposed transceiver circuit is fabricated entirely using an atomic layer deposition process. Moreover, the proposed circuit presents two modulation schemes: frequency shift keying and ON/OFF keying. The fabricated TFTs exhibit saturation mobility, threshold voltage, a subthreshold swing, and an ON/OFF ratio of 18.2 cm2 V−1 s−1, 0.9 V, 419 mVdec−1, and 109 times, respectively. Finally, the circuit functionality is demonstrated by the word “KAUST” as a Morse code.
Original languageEnglish (US)
Pages (from-to)1901083
JournalAdvanced Electronic Materials
StatePublished - Feb 3 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Research reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also thank the core laboratory staff and the imaging and characterization staff at KAUST. A.H.H. and M.K.H. contributed equally to this work.


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