Full-scale exfoliation of InGaN-based light-eMitting diodes via Microcavity-assisted crack propagation by using tensile-stressed Ni layers

Jung Hong Min, Tae Hoon Jeong, Kwang Jae Lee, Jung Wook Min, Tae Yong Park, Tien Khee Ng, Boon S. Ooi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrated microcavity-assisted crack propagation for the full-scale exfoliation of a InGaN-based light-emitting diode (LED) membrane by using nanoporous structures and tensile-stressed Ni layers. The blue LED membrane was transferred on a glass slide by using an adhesive bonding and showed good performance.

Original languageEnglish (US)
Title of host publication2022 28th International Semiconductor Laser Conference, ISLC 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784885523359
DOIs
StatePublished - 2022
Event28th International Semiconductor Laser Conference, ISLC 2022 - Matsue, Japan
Duration: Oct 16 2022Oct 19 2022

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
Volume2022-October
ISSN (Print)0899-9406

Conference

Conference28th International Semiconductor Laser Conference, ISLC 2022
Country/TerritoryJapan
CityMatsue
Period10/16/2210/19/22

Bibliographical note

Publisher Copyright:
© 2022 IEICE.

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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