Formation of polymers in TMGa/NH3/H2 system under GaN growth

Akira Hirako; Kazuhiro Ohkawa

doi:10.1016/j.jcrysgro.2005.11.125

Formation of polymers in TMGa/NH₃/H₂ system under GaN growth

Akira Hirako^*, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We report analysis of gas-phase chemistry and the generation pathways of polymers in a horizontal reactor under metalorganic vapor-phase epitaxy of GaN films by using computational fluid dynamics simulations. The simulation model considered radiative heat transfer and the reaction model of TMGa/NH ₃/H₂ system, including the formation of polymers such as [Ga-N]_n and [MMGaNH]_n (n=2-6). It was found that Ga-N polymers are generated at a temperature region about 700 K, and that the temperature is the boundary between [Ga-N]₂ dissociation ([Ga-N] ₂→Ga-N) and Ga-N polymerization (such as [Ga-N] ₂→[Ga-N]_3-6).

Original language	English (US)
Pages (from-to)	428-432
Number of pages	5
Journal	Journal of Crystal Growth
Volume	289
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.11.125
State	Published - Apr 1 2006
Externally published	Yes

Keywords

A1. Computer simulation
A3. Metalorganic vapor phase epitaxy
B1. Nitrides
B2. Semiconducting gallium compounds

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2005.11.125

Cite this

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title = "Formation of polymers in TMGa/NH3/H2 system under GaN growth",

abstract = "We report analysis of gas-phase chemistry and the generation pathways of polymers in a horizontal reactor under metalorganic vapor-phase epitaxy of GaN films by using computational fluid dynamics simulations. The simulation model considered radiative heat transfer and the reaction model of TMGa/NH 3/H2 system, including the formation of polymers such as [Ga-N]n and [MMGaNH]n (n=2-6). It was found that Ga-N polymers are generated at a temperature region about 700 K, and that the temperature is the boundary between [Ga-N]2 dissociation ([Ga-N] 2→Ga-N) and Ga-N polymerization (such as [Ga-N] 2→[Ga-N]3-6).",

keywords = "A1. Computer simulation, A3. Metalorganic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting gallium compounds",

author = "Akira Hirako and Kazuhiro Ohkawa",

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doi = "10.1016/j.jcrysgro.2005.11.125",

language = "English (US)",

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pages = "428--432",

journal = "Journal of Crystal Growth",

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T1 - Formation of polymers in TMGa/NH3/H2 system under GaN growth

AU - Hirako, Akira

AU - Ohkawa, Kazuhiro

PY - 2006/4/1

Y1 - 2006/4/1

N2 - We report analysis of gas-phase chemistry and the generation pathways of polymers in a horizontal reactor under metalorganic vapor-phase epitaxy of GaN films by using computational fluid dynamics simulations. The simulation model considered radiative heat transfer and the reaction model of TMGa/NH 3/H2 system, including the formation of polymers such as [Ga-N]n and [MMGaNH]n (n=2-6). It was found that Ga-N polymers are generated at a temperature region about 700 K, and that the temperature is the boundary between [Ga-N]2 dissociation ([Ga-N] 2→Ga-N) and Ga-N polymerization (such as [Ga-N] 2→[Ga-N]3-6).

AB - We report analysis of gas-phase chemistry and the generation pathways of polymers in a horizontal reactor under metalorganic vapor-phase epitaxy of GaN films by using computational fluid dynamics simulations. The simulation model considered radiative heat transfer and the reaction model of TMGa/NH 3/H2 system, including the formation of polymers such as [Ga-N]n and [MMGaNH]n (n=2-6). It was found that Ga-N polymers are generated at a temperature region about 700 K, and that the temperature is the boundary between [Ga-N]2 dissociation ([Ga-N] 2→Ga-N) and Ga-N polymerization (such as [Ga-N] 2→[Ga-N]3-6).

KW - A1. Computer simulation

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting gallium compounds

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