Formation of long-range stripe patterns with sub-10-nm half-pitch from directed self-assembly of block copolymer

Mikihito Takenaka; Shusuke Aburaya; Satoshi Akasaka; Hirokazu Hasegawa; Nikos Hadjichristidis; George Sakellariou; Yasuhiko Tada; Hiroshi Yoshida

doi:10.1002/polb.22115

Formation of long-range stripe patterns with sub-10-nm half-pitch from directed self-assembly of block copolymer

Mikihito Takenaka^*, Shusuke Aburaya, Satoshi Akasaka, Hirokazu Hasegawa, Nikos Hadjichristidis, George Sakellariou, Yasuhiko Tada, Hiroshi Yoshida

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We have demonstrated directed self-assembly of poly(styrene-b- dimethylsiloxiane) (PS-b-PDMS) down to sub-10-nm half-pitch by using grating Si substrate coated with PDMS. The strong segregation between PS and PDMS enables us to direct the self-assembly in wide grooves of the grating substrate up to 500 nm in width. This process can be applied to form various type of sub-10-nm stripe pattern along variety of grating shape.

Original language	English (US)
Pages (from-to)	2297-2301
Number of pages	5
Journal	Journal of Polymer Science, Part B: Polymer Physics
Volume	48
Issue number	22
DOIs	https://doi.org/10.1002/polb.22115
State	Published - Nov 15 2010
Externally published	Yes

Keywords

block copolymers
directed self-assembly
thin films

ASJC Scopus subject areas

Condensed Matter Physics
Physical and Theoretical Chemistry
Polymers and Plastics
Materials Chemistry

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10.1002/polb.22115

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title = "Formation of long-range stripe patterns with sub-10-nm half-pitch from directed self-assembly of block copolymer",

abstract = "We have demonstrated directed self-assembly of poly(styrene-b- dimethylsiloxiane) (PS-b-PDMS) down to sub-10-nm half-pitch by using grating Si substrate coated with PDMS. The strong segregation between PS and PDMS enables us to direct the self-assembly in wide grooves of the grating substrate up to 500 nm in width. This process can be applied to form various type of sub-10-nm stripe pattern along variety of grating shape.",

keywords = "block copolymers, directed self-assembly, thin films",

author = "Mikihito Takenaka and Shusuke Aburaya and Satoshi Akasaka and Hirokazu Hasegawa and Nikos Hadjichristidis and George Sakellariou and Yasuhiko Tada and Hiroshi Yoshida",

year = "2010",

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day = "15",

doi = "10.1002/polb.22115",

language = "English (US)",

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journal = "Journal of Polymer Science, Part B: Polymer Physics",

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T1 - Formation of long-range stripe patterns with sub-10-nm half-pitch from directed self-assembly of block copolymer

AU - Takenaka, Mikihito

AU - Aburaya, Shusuke

AU - Akasaka, Satoshi

AU - Hasegawa, Hirokazu

AU - Hadjichristidis, Nikos

AU - Sakellariou, George

AU - Tada, Yasuhiko

AU - Yoshida, Hiroshi

PY - 2010/11/15

Y1 - 2010/11/15

N2 - We have demonstrated directed self-assembly of poly(styrene-b- dimethylsiloxiane) (PS-b-PDMS) down to sub-10-nm half-pitch by using grating Si substrate coated with PDMS. The strong segregation between PS and PDMS enables us to direct the self-assembly in wide grooves of the grating substrate up to 500 nm in width. This process can be applied to form various type of sub-10-nm stripe pattern along variety of grating shape.

AB - We have demonstrated directed self-assembly of poly(styrene-b- dimethylsiloxiane) (PS-b-PDMS) down to sub-10-nm half-pitch by using grating Si substrate coated with PDMS. The strong segregation between PS and PDMS enables us to direct the self-assembly in wide grooves of the grating substrate up to 500 nm in width. This process can be applied to form various type of sub-10-nm stripe pattern along variety of grating shape.

KW - block copolymers

KW - directed self-assembly

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=78649397998&partnerID=8YFLogxK

U2 - 10.1002/polb.22115

DO - 10.1002/polb.22115

M3 - Article

AN - SCOPUS:78649397998

SN - 0887-6266

VL - 48

SP - 2297

EP - 2301

JO - Journal of Polymer Science, Part B: Polymer Physics

JF - Journal of Polymer Science, Part B: Polymer Physics

IS - 22

ER -

Formation of long-range stripe patterns with sub-10-nm half-pitch from directed self-assembly of block copolymer

Abstract

Keywords

ASJC Scopus subject areas

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