Focused-ion-beam-deposited Pt contacts on ZnO nanowires

J. H. He; P. H. Chang; C. Y. Chen; K. T. Tsai

doi:10.1149/1.3095822

Focused-ion-beam-deposited Pt contacts on ZnO nanowires

J. H. He, P. H. Chang, C. Y. Chen, K. T. Tsai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm². The resistivity of the ZnO nanowires is measured to be 2.2×10^-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼10⁸ have been fabricated and characterized.

Original language	English (US)
Title of host publication	ECS Transactions - One-Dimensional Nanoscale Electronic and Photonic Devices 2 - 214th ECS Meeting
Pages	13-20
Number of pages	8
Volume	16
Edition	33
DOIs	https://doi.org/10.1149/1.3095822
State	Published - 2009
Externally published	Yes
Event	One-Dimensional Nanoscale Electronic and Photonic Devices 2 - 214th ECS Meeting - Honolulu, HI, United States Duration: Oct 12 2008 → Oct 17 2008

Other

Other	One-Dimensional Nanoscale Electronic and Photonic Devices 2 - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	10/12/08 → 10/17/08

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3095822

Cite this

@inproceedings{4380cd2d7d8746a9b80c3d3ca49a398c,

title = "Focused-ion-beam-deposited Pt contacts on ZnO nanowires",

abstract = "We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm2. The resistivity of the ZnO nanowires is measured to be 2.2×10-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼108 have been fabricated and characterized.",

author = "He, {J. H.} and Chang, {P. H.} and Chen, {C. Y.} and Tsai, {K. T.}",

year = "2009",

doi = "10.1149/1.3095822",

language = "English (US)",

isbn = "9781615673070",

volume = "16",

pages = "13--20",

booktitle = "ECS Transactions - One-Dimensional Nanoscale Electronic and Photonic Devices 2 - 214th ECS Meeting",

edition = "33",

note = "One-Dimensional Nanoscale Electronic and Photonic Devices 2 - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",

}

He, JH, Chang, PH, Chen, CY & Tsai, KT 2009, Focused-ion-beam-deposited Pt contacts on ZnO nanowires. in ECS Transactions - One-Dimensional Nanoscale Electronic and Photonic Devices 2 - 214th ECS Meeting. 33 edn, vol. 16, pp. 13-20, One-Dimensional Nanoscale Electronic and Photonic Devices 2 - 214th ECS Meeting, Honolulu, HI, United States, 10/12/08. https://doi.org/10.1149/1.3095822

TY - GEN

T1 - Focused-ion-beam-deposited Pt contacts on ZnO nanowires

AU - He, J. H.

AU - Chang, P. H.

AU - Chen, C. Y.

AU - Tsai, K. T.

PY - 2009

Y1 - 2009

N2 - We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm2. The resistivity of the ZnO nanowires is measured to be 2.2×10-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼108 have been fabricated and characterized.

AB - We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm2. The resistivity of the ZnO nanowires is measured to be 2.2×10-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼108 have been fabricated and characterized.

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U2 - 10.1149/1.3095822

DO - 10.1149/1.3095822

M3 - Conference contribution

AN - SCOPUS:70449637711

SN - 9781615673070

VL - 16

SP - 13

EP - 20

BT - ECS Transactions - One-Dimensional Nanoscale Electronic and Photonic Devices 2 - 214th ECS Meeting

T2 - One-Dimensional Nanoscale Electronic and Photonic Devices 2 - 214th ECS Meeting

Y2 - 12 October 2008 through 17 October 2008

ER -

Focused-ion-beam-deposited Pt contacts on ZnO nanowires

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