Flip-chip blue LEDs grown on (20(2)over-bar1) bulk GaN substrates utilizing photoelectrochemical etching for substrate removal

Benjamin P. Yonkee; Burhan SaifAddin; John T. Leonard; Steven P. DenBaars; Shuji Nakamura

doi:10.7567/APEX.9.056502

Flip-chip blue LEDs grown on (20(2)over-bar1) bulk GaN substrates utilizing photoelectrochemical etching for substrate removal

Benjamin P. Yonkee, Burhan SaifAddin, John T. Leonard, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We demonstrate a 440nm emitting flip-chip GaN LED utilizing photoelectrochemical (PEC) etching for substrate removal. The device was flip-chipbonded to a thermally conductive silicon carbide substrate, which allowed for CW operation at current densities up to 200A/cm2 with minimal thermal droop. The PEC etch provided a damage-free method of removing substrates and could allow for substrate reuse. The epitaxially defined etch also exposed a highly doped n-contact layer, which contributed to the low operating voltage of 3.74V at 400A/cm2 and a peak wall plug efficiency (WPE) of 7%.

Original language	English (US)
Pages (from-to)	056502
Journal	APPLIED PHYSICS EXPRESS
Volume	9
Issue number	5
DOIs	https://doi.org/10.7567/APEX.9.056502
State	Published - Apr 20 2016
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2022-05-31
Acknowledgements: The authors would like to thank Kenji Fujito of Mitsubishi Chemical Corporation for providing high-quality free-standing GaN substrates. This work was funded in part by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program, and the Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB). Part of this work was carried out at the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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@article{29048373ca514a1298f659583d8c7c8b,

title = "Flip-chip blue LEDs grown on (20(2)over-bar1) bulk GaN substrates utilizing photoelectrochemical etching for substrate removal",

abstract = "We demonstrate a 440nm emitting flip-chip GaN LED utilizing photoelectrochemical (PEC) etching for substrate removal. The device was flip-chipbonded to a thermally conductive silicon carbide substrate, which allowed for CW operation at current densities up to 200A/cm2 with minimal thermal droop. The PEC etch provided a damage-free method of removing substrates and could allow for substrate reuse. The epitaxially defined etch also exposed a highly doped n-contact layer, which contributed to the low operating voltage of 3.74V at 400A/cm2 and a peak wall plug efficiency (WPE) of 7%.",

author = "Yonkee, {Benjamin P.} and Burhan SaifAddin and Leonard, {John T.} and DenBaars, {Steven P.} and Shuji Nakamura",

note = "KAUST Repository Item: Exported on 2022-05-31 Acknowledgements: The authors would like to thank Kenji Fujito of Mitsubishi Chemical Corporation for providing high-quality free-standing GaN substrates. This work was funded in part by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program, and the Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB). Part of this work was carried out at the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2016",

month = apr,

day = "20",

doi = "10.7567/APEX.9.056502",

language = "English (US)",

volume = "9",

pages = "056502",

journal = "APPLIED PHYSICS EXPRESS",

issn = "1882-0786",

publisher = "Japan Society of Applied Physics",

number = "5",

}

TY - JOUR

T1 - Flip-chip blue LEDs grown on (20(2)over-bar1) bulk GaN substrates utilizing photoelectrochemical etching for substrate removal

AU - Yonkee, Benjamin P.

AU - SaifAddin, Burhan

AU - Leonard, John T.

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

N1 - KAUST Repository Item: Exported on 2022-05-31 Acknowledgements: The authors would like to thank Kenji Fujito of Mitsubishi Chemical Corporation for providing high-quality free-standing GaN substrates. This work was funded in part by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program, and the Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB). Part of this work was carried out at the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2016/4/20

Y1 - 2016/4/20

N2 - We demonstrate a 440nm emitting flip-chip GaN LED utilizing photoelectrochemical (PEC) etching for substrate removal. The device was flip-chipbonded to a thermally conductive silicon carbide substrate, which allowed for CW operation at current densities up to 200A/cm2 with minimal thermal droop. The PEC etch provided a damage-free method of removing substrates and could allow for substrate reuse. The epitaxially defined etch also exposed a highly doped n-contact layer, which contributed to the low operating voltage of 3.74V at 400A/cm2 and a peak wall plug efficiency (WPE) of 7%.

AB - We demonstrate a 440nm emitting flip-chip GaN LED utilizing photoelectrochemical (PEC) etching for substrate removal. The device was flip-chipbonded to a thermally conductive silicon carbide substrate, which allowed for CW operation at current densities up to 200A/cm2 with minimal thermal droop. The PEC etch provided a damage-free method of removing substrates and could allow for substrate reuse. The epitaxially defined etch also exposed a highly doped n-contact layer, which contributed to the low operating voltage of 3.74V at 400A/cm2 and a peak wall plug efficiency (WPE) of 7%.

UR - http://hdl.handle.net/10754/678345

UR - https://iopscience.iop.org/article/10.7567/APEX.9.056502

UR - http://www.scopus.com/inward/record.url?scp=84964949974&partnerID=8YFLogxK

U2 - 10.7567/APEX.9.056502

DO - 10.7567/APEX.9.056502

M3 - Article

SN - 1882-0786

VL - 9

SP - 056502

JO - APPLIED PHYSICS EXPRESS

JF - APPLIED PHYSICS EXPRESS

IS - 5

ER -

Flip-chip blue LEDs grown on (20(2)over-bar1) bulk GaN substrates utilizing photoelectrochemical etching for substrate removal

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