Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape

Shahab Shervin; Mina Moradnia; Md Kamrul Alam; Tain Tong; Mi-Hee Ji; Jie Chen; Sara Pouladi; Theeradetch Detchprohm; Rebecca Forrest; Jiming Bao; Russell D. Dupuis; Jae-Hyun Ryou

doi:10.1039/d0tc04634e

Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape

Shahab Shervin, Mina Moradnia, Md Kamrul Alam, Tain Tong, Mi-Hee Ji, Jie Chen, Sara Pouladi, Theeradetch Detchprohm, Rebecca Forrest, Jiming Bao, Russell D. Dupuis, Jae-Hyun Ryou

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Demonstration of a mechanically flexible single-crystalline GaN substrate by direct epitaxial growth on metal foil with significantly reduced processing costs and versatile functionality on flexible electronics and photonics.

Original language	English (US)
Journal	Journal of Materials Chemistry C
DOIs	https://doi.org/10.1039/d0tc04634e
State	Published - 2021
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2021-02-16
Acknowledged KAUST grant number(s): OSR-2017-CRG6-3437.02
Acknowledgements: The work at the University of Houston was partially supported by the National Science Foundation under Grant No. 1842299 (Electrical, Communications and Cyber Systems (ECCS)) and Grant No. 1907626 (I-CORPS of Industrial Innovation and Partnerships (IIP)) and King Abdullah University of Science and Technology (KAUST), Saudi Arabia (Contract No. OSR-2017-CRG6-3437.02). J. H. R. also acknowledges partial support from the Texas Center for Superconductivity at the University of Houston (TcSUH) and Advanced Manufacturing Institute (AMI).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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@article{19c622bd41e6423788e66bcea4829d17,

title = "Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape",

abstract = "Demonstration of a mechanically flexible single-crystalline GaN substrate by direct epitaxial growth on metal foil with significantly reduced processing costs and versatile functionality on flexible electronics and photonics.",

author = "Shahab Shervin and Mina Moradnia and Alam, {Md Kamrul} and Tain Tong and Mi-Hee Ji and Jie Chen and Sara Pouladi and Theeradetch Detchprohm and Rebecca Forrest and Jiming Bao and Dupuis, {Russell D.} and Jae-Hyun Ryou",

note = "KAUST Repository Item: Exported on 2021-02-16 Acknowledged KAUST grant number(s): OSR-2017-CRG6-3437.02 Acknowledgements: The work at the University of Houston was partially supported by the National Science Foundation under Grant No. 1842299 (Electrical, Communications and Cyber Systems (ECCS)) and Grant No. 1907626 (I-CORPS of Industrial Innovation and Partnerships (IIP)) and King Abdullah University of Science and Technology (KAUST), Saudi Arabia (Contract No. OSR-2017-CRG6-3437.02). J. H. R. also acknowledges partial support from the Texas Center for Superconductivity at the University of Houston (TcSUH) and Advanced Manufacturing Institute (AMI). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2021",

doi = "10.1039/d0tc04634e",

language = "English (US)",

journal = "Journal of Materials Chemistry C",

issn = "2050-7526",

publisher = "Royal Society of Chemistry",

}

TY - JOUR

T1 - Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape

AU - Shervin, Shahab

AU - Moradnia, Mina

AU - Alam, Md Kamrul

AU - Tong, Tain

AU - Ji, Mi-Hee

AU - Chen, Jie

AU - Pouladi, Sara

AU - Detchprohm, Theeradetch

AU - Forrest, Rebecca

AU - Bao, Jiming

AU - Dupuis, Russell D.

AU - Ryou, Jae-Hyun

N1 - KAUST Repository Item: Exported on 2021-02-16 Acknowledged KAUST grant number(s): OSR-2017-CRG6-3437.02 Acknowledgements: The work at the University of Houston was partially supported by the National Science Foundation under Grant No. 1842299 (Electrical, Communications and Cyber Systems (ECCS)) and Grant No. 1907626 (I-CORPS of Industrial Innovation and Partnerships (IIP)) and King Abdullah University of Science and Technology (KAUST), Saudi Arabia (Contract No. OSR-2017-CRG6-3437.02). J. H. R. also acknowledges partial support from the Texas Center for Superconductivity at the University of Houston (TcSUH) and Advanced Manufacturing Institute (AMI). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2021

Y1 - 2021

N2 - Demonstration of a mechanically flexible single-crystalline GaN substrate by direct epitaxial growth on metal foil with significantly reduced processing costs and versatile functionality on flexible electronics and photonics.

AB - Demonstration of a mechanically flexible single-crystalline GaN substrate by direct epitaxial growth on metal foil with significantly reduced processing costs and versatile functionality on flexible electronics and photonics.

UR - http://hdl.handle.net/10754/667438

UR - http://xlink.rsc.org/?DOI=D0TC04634E

U2 - 10.1039/d0tc04634e

DO - 10.1039/d0tc04634e

M3 - Article

SN - 2050-7526

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

ER -

Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape

Abstract

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