Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape

Shahab Shervin, Mina Moradnia, Md Kamrul Alam, Tain Tong, Mi-Hee Ji, Jie Chen, Sara Pouladi, Theeradetch Detchprohm, Rebecca Forrest, Jiming Bao, Russell D. Dupuis, Jae-Hyun Ryou

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Demonstration of a mechanically flexible single-crystalline GaN substrate by direct epitaxial growth on metal foil with significantly reduced processing costs and versatile functionality on flexible electronics and photonics.
Original languageEnglish (US)
JournalJournal of Materials Chemistry C
DOIs
StatePublished - 2021
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2021-02-16
Acknowledged KAUST grant number(s): OSR-2017-CRG6-3437.02
Acknowledgements: The work at the University of Houston was partially supported by the National Science Foundation under Grant No. 1842299 (Electrical, Communications and Cyber Systems (ECCS)) and Grant No. 1907626 (I-CORPS of Industrial Innovation and Partnerships (IIP)) and King Abdullah University of Science and Technology (KAUST), Saudi Arabia (Contract No. OSR-2017-CRG6-3437.02). J. H. R. also acknowledges partial support from the Texas Center for Superconductivity at the University of Houston (TcSUH) and Advanced Manufacturing Institute (AMI).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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