Flexible, simplified CMOS on Si(110) with metal gate / high κ for HP and LSTP

H. R. Harris; S. E. Thompson; S. Krishnan; P. Kirsch; P. Majhi; Casey Smith; M. M. Hussain; G. Sun; H. Adhikari; S. Suthram; B. H. Lee; H. H. Tseng; R. Jammy

doi:10.1109/IEDM.2007.4418862

Flexible, simplified CMOS on Si(110) with metal gate / high κ for HP and LSTP

H. R. Harris, S. E. Thompson, S. Krishnan, P. Kirsch, P. Majhi, Casey Smith, M. M. Hussain, G. Sun, H. Adhikari, S. Suthram, B. H. Lee, H. H. Tseng, R. Jammy

Research output: Contribution to journal › Conference article › peer-review

13 Scopus citations

Abstract

We examine and demonstrate the benefit of high κ and metal gate on Si(110) orientation-only CMOS devices and demonstrate not only good PMOS but competitive NMOS device performance. It is shown that high k / metal gates on NMOS Si(110) surface have higher than expected performance due to velocity saturation of minority carriers. Improvement in source/drain extension results in nearly symmetric CMOS output characteristics with no stress enhancement. Examining potential circuit impact reveals that the Si(110) surface provides a significant improvement in performance for HP and LSTP without large process complexity associated with mixed orientation CMOS approaches.

Original language	English (US)
Article number	4418862
Pages (from-to)	57-60
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4418862
State	Published - 2007
Externally published	Yes
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: Dec 10 2007 → Dec 12 2007

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2007.4418862

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Harris, H. R., Thompson, S. E., Krishnan, S., Kirsch, P., Majhi, P., Smith, C., Hussain, M. M., Sun, G., Adhikari, H., Suthram, S., Lee, B. H., Tseng, H. H., & Jammy, R. (2007). Flexible, simplified CMOS on Si(110) with metal gate / high κ for HP and LSTP. Technical Digest - International Electron Devices Meeting, IEDM, 57-60. Article 4418862. https://doi.org/10.1109/IEDM.2007.4418862

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title = "Flexible, simplified CMOS on Si(110) with metal gate / high κ for HP and LSTP",

abstract = "We examine and demonstrate the benefit of high κ and metal gate on Si(110) orientation-only CMOS devices and demonstrate not only good PMOS but competitive NMOS device performance. It is shown that high k / metal gates on NMOS Si(110) surface have higher than expected performance due to velocity saturation of minority carriers. Improvement in source/drain extension results in nearly symmetric CMOS output characteristics with no stress enhancement. Examining potential circuit impact reveals that the Si(110) surface provides a significant improvement in performance for HP and LSTP without large process complexity associated with mixed orientation CMOS approaches.",

author = "Harris, {H. R.} and Thompson, {S. E.} and S. Krishnan and P. Kirsch and P. Majhi and Casey Smith and Hussain, {M. M.} and G. Sun and H. Adhikari and S. Suthram and Lee, {B. H.} and Tseng, {H. H.} and R. Jammy",

year = "2007",

doi = "10.1109/IEDM.2007.4418862",

language = "English (US)",

pages = "57--60",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

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note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

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T1 - Flexible, simplified CMOS on Si(110) with metal gate / high κ for HP and LSTP

AU - Harris, H. R.

AU - Thompson, S. E.

AU - Krishnan, S.

AU - Kirsch, P.

AU - Majhi, P.

AU - Smith, Casey

AU - Hussain, M. M.

AU - Sun, G.

AU - Adhikari, H.

AU - Suthram, S.

AU - Lee, B. H.

AU - Tseng, H. H.

AU - Jammy, R.

PY - 2007

Y1 - 2007

N2 - We examine and demonstrate the benefit of high κ and metal gate on Si(110) orientation-only CMOS devices and demonstrate not only good PMOS but competitive NMOS device performance. It is shown that high k / metal gates on NMOS Si(110) surface have higher than expected performance due to velocity saturation of minority carriers. Improvement in source/drain extension results in nearly symmetric CMOS output characteristics with no stress enhancement. Examining potential circuit impact reveals that the Si(110) surface provides a significant improvement in performance for HP and LSTP without large process complexity associated with mixed orientation CMOS approaches.

AB - We examine and demonstrate the benefit of high κ and metal gate on Si(110) orientation-only CMOS devices and demonstrate not only good PMOS but competitive NMOS device performance. It is shown that high k / metal gates on NMOS Si(110) surface have higher than expected performance due to velocity saturation of minority carriers. Improvement in source/drain extension results in nearly symmetric CMOS output characteristics with no stress enhancement. Examining potential circuit impact reveals that the Si(110) surface provides a significant improvement in performance for HP and LSTP without large process complexity associated with mixed orientation CMOS approaches.

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DO - 10.1109/IEDM.2007.4418862

M3 - Conference article

AN - SCOPUS:50249133188

SN - 0163-1918

SP - 57

EP - 60

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

M1 - 4418862

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

Flexible, simplified CMOS on Si(110) with metal gate / high κ for HP and LSTP

Abstract

ASJC Scopus subject areas

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