TY - JOUR
T1 - Flexible IGZO TFTs and their Suitability for Space Applications
AU - Costa, Julio C.
AU - Pouryazdan, Arash
AU - Panidi, Julianna
AU - Spina, Filippo
AU - Anthopoulos, Thomas D.
AU - Liedke, Maciej O.
AU - Schneider, Christof
AU - Wagner, Andreas
AU - Munzenrieder, Niko
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was partially supported by EPSRC, GCRF, and NIHR, under the contact number: EP/R013837/1 (SmartSensOtics)
PY - 2019/7/29
Y1 - 2019/7/29
N2 - In this paper, Low Earth Orbit radiation (LEO), temperature and magnetic field conditions are mimicked to investigate the suitability of flexible InGaZnO transistors for lightweight space wearables. More specifically, the impacts of high energetic electron irradiation with fluences up to e12e-, low operating temperatures down to 78 and magnetic fields up to 11 are investigated. This simulates 278 in LEO. The threshold voltage and mobility of transistors that were exposed to e- irradiation are found to shift by +separate-uncertainty0.09± 0.05 and -separate-uncertainty0.6± 0.52-1-1. Subsequent low temperature exposure resulted in additional shifts of +0.38 and -5.952-1-1 for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. Conversely, the performance of the devices was observed not to be significantly affected by the magnetic fields. Finally, a Cascode amplifier presenting a voltage gain of 10.3 and a cutoff frequency of 1.2 is demonstrated after the sample had been irradiated, cooled down and exposed to the magnetic fields. If these notions are considered during the systems’ design, these devices can be used to unobtrusively integrate sensor systems into space suits.
AB - In this paper, Low Earth Orbit radiation (LEO), temperature and magnetic field conditions are mimicked to investigate the suitability of flexible InGaZnO transistors for lightweight space wearables. More specifically, the impacts of high energetic electron irradiation with fluences up to e12e-, low operating temperatures down to 78 and magnetic fields up to 11 are investigated. This simulates 278 in LEO. The threshold voltage and mobility of transistors that were exposed to e- irradiation are found to shift by +separate-uncertainty0.09± 0.05 and -separate-uncertainty0.6± 0.52-1-1. Subsequent low temperature exposure resulted in additional shifts of +0.38 and -5.952-1-1 for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. Conversely, the performance of the devices was observed not to be significantly affected by the magnetic fields. Finally, a Cascode amplifier presenting a voltage gain of 10.3 and a cutoff frequency of 1.2 is demonstrated after the sample had been irradiated, cooled down and exposed to the magnetic fields. If these notions are considered during the systems’ design, these devices can be used to unobtrusively integrate sensor systems into space suits.
UR - http://hdl.handle.net/10754/656806
UR - https://ieeexplore.ieee.org/document/8778754/
UR - http://www.scopus.com/inward/record.url?scp=85070355674&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2019.2931614
DO - 10.1109/JEDS.2019.2931614
M3 - Article
SN - 2168-6734
VL - 7
SP - 1182
EP - 1190
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
ER -