Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric

Jhonathan Prieto Rojas; Mohamed T. Ghoneim; Chadwin Young; Muhammad Mustafa Hussain

doi:10.1109/TED.2013.2278186

Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric

Jhonathan Prieto Rojas, Mohamed T. Ghoneim, Chadwin Young, Muhammad Mustafa Hussain

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\rm cm}2 and thickness: 25 \mu{\rm m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.

Original language	English (US)
Pages (from-to)	3305-3309
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	10
DOIs	https://doi.org/10.1109/TED.2013.2278186
State	Published - Oct 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported in part by King Abdullah University of Science and Technology Office of Competitive Research Fund and in part by the Competitive Research under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor H. Shang.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2013.2278186

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title = "Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric",

abstract = "Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\rm cm}2 and thickness: 25 \mu{\rm m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. {\textcopyright} 1963-2012 IEEE.",

author = "Rojas, {Jhonathan Prieto} and Ghoneim, {Mohamed T.} and Chadwin Young and Hussain, {Muhammad Mustafa}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported in part by King Abdullah University of Science and Technology Office of Competitive Research Fund and in part by the Competitive Research under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor H. Shang.",

year = "2013",

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AU - Ghoneim, Mohamed T.

AU - Young, Chadwin

AU - Hussain, Muhammad Mustafa

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported in part by King Abdullah University of Science and Technology Office of Competitive Research Fund and in part by the Competitive Research under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor H. Shang.

PY - 2013/10

Y1 - 2013/10

N2 - Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\rm cm}2 and thickness: 25 \mu{\rm m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.

AB - Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\rm cm}2 and thickness: 25 \mu{\rm m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.

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DO - 10.1109/TED.2013.2278186

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric

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