An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|Original language||English (US)|
|Number of pages||6|
|State||Published - Feb 22 2014|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): CRG-1-2012-HUS-008
Acknowledgements: We would like to thank the Competitive Research Grant: CRG-1-2012-HUS-008 and the staff of the KAUST Advanced Nanofabrication Facilities for their technical support during the development of this project. We also thank Dr. Casey Smith for mask design. We are also grateful to Maria Peredo Silva for the rendition of Figure 2. Finally we thank Mrs. Kelly Rader for proof reading our revised manuscript.
ASJC Scopus subject areas
- Mechanics of Materials
- Materials Science(all)
- Mechanical Engineering