Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

Galo T. Sevilla; Jhonathan Prieto Rojas; Hossain M. Fahad; Aftab M. Hussain; Rawan Ghanem; Casey Smith; Muhammad Mustafa Hussain

doi:10.1002/adma.201305309

Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

Galo T. Sevilla, Jhonathan Prieto Rojas, Hossain M. Fahad, Aftab M. Hussain, Rawan Ghanem, Casey Smith, Muhammad Mustafa Hussain

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	2794-2799
Number of pages	6
Journal	Advanced Materials
Volume	26
Issue number	18
DOIs	https://doi.org/10.1002/adma.201305309 https://doi.org/10.1002/adma.201470116
State	Published - Feb 22 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): CRG-1-2012-HUS-008
Acknowledgements: We would like to thank the Competitive Research Grant: CRG-1-2012-HUS-008 and the staff of the KAUST Advanced Nanofabrication Facilities for their technical support during the development of this project. We also thank Dr. Casey Smith for mask design. We are also grateful to Maria Peredo Silva for the rendition of Figure 2. Finally we thank Mrs. Kelly Rader for proof reading our revised manuscript.

ASJC Scopus subject areas

Mechanics of Materials
General Materials Science
Mechanical Engineering

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@article{76ae00fafa84477b90c0c28256cfcd59,

title = "Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation",

abstract = "An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. {\textcopyright} 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

author = "Sevilla, {Galo T.} and Rojas, {Jhonathan Prieto} and Fahad, {Hossain M.} and Hussain, {Aftab M.} and Rawan Ghanem and Casey Smith and Hussain, {Muhammad Mustafa}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): CRG-1-2012-HUS-008 Acknowledgements: We would like to thank the Competitive Research Grant: CRG-1-2012-HUS-008 and the staff of the KAUST Advanced Nanofabrication Facilities for their technical support during the development of this project. We also thank Dr. Casey Smith for mask design. We are also grateful to Maria Peredo Silva for the rendition of Figure 2. Finally we thank Mrs. Kelly Rader for proof reading our revised manuscript.",

year = "2014",

month = feb,

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doi = "10.1002/adma.201305309",

language = "English (US)",

volume = "26",

pages = "2794--2799",

journal = "Advanced Materials",

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AU - Sevilla, Galo T.

AU - Rojas, Jhonathan Prieto

AU - Fahad, Hossain M.

AU - Hussain, Aftab M.

AU - Ghanem, Rawan

AU - Smith, Casey

AU - Hussain, Muhammad Mustafa

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): CRG-1-2012-HUS-008 Acknowledgements: We would like to thank the Competitive Research Grant: CRG-1-2012-HUS-008 and the staff of the KAUST Advanced Nanofabrication Facilities for their technical support during the development of this project. We also thank Dr. Casey Smith for mask design. We are also grateful to Maria Peredo Silva for the rendition of Figure 2. Finally we thank Mrs. Kelly Rader for proof reading our revised manuscript.

PY - 2014/2/22

Y1 - 2014/2/22

N2 - An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

UR - http://hdl.handle.net/10754/563402

UR - http://doi.wiley.com/10.1002/adma.201305309

UR - http://www.scopus.com/inward/record.url?scp=84900028533&partnerID=8YFLogxK

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JO - Advanced Materials

JF - Advanced Materials

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ER -

Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

Abstract

Bibliographical note

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