First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

Mohammed Abdul Majid, Ahmad Al-Jabr, Hassan M. Oubei, Mohd Sharizal Alias, Dalaver H. Anjum, Tien Khee Ng, Boon S. Ooi

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The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.
Original languageEnglish (US)
Pages (from-to)1102-1104
Number of pages3
JournalElectronics Letters
Issue number14
StatePublished - Jun 26 2015

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