First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

Mohammed Abdul Majid; Ahmad Al-Jabr; Hassan M. Oubei; Mohd Sharizal Alias; Dalaver H. Anjum; Tien Khee Ng; Boon S. Ooi

doi:10.1049/el.2015.1658

First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

Mohammed Abdul Majid, Ahmad Al-Jabr, Hassan M. Oubei, Mohd Sharizal Alias, Dalaver H. Anjum, Tien Khee Ng, Boon S. Ooi

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14 Scopus citations

Abstract

The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.

Original language	English (US)
Pages (from-to)	1102-1104
Number of pages	3
Journal	Electronics Letters
Volume	51
Issue number	14
DOIs	https://doi.org/10.1049/el.2015.1658
State	Published - Jun 26 2015

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@article{5221344d82fe422489041e30081e61c2,

title = "First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm",

abstract = "The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.",

author = "Majid, {Mohammed Abdul} and Ahmad Al-Jabr and Oubei, {Hassan M.} and Alias, {Mohd Sharizal} and Anjum, {Dalaver H.} and Ng, {Tien Khee} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2015",

month = jun,

day = "26",

doi = "10.1049/el.2015.1658",

language = "English (US)",

volume = "51",

pages = "1102--1104",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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TY - JOUR

T1 - First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

AU - Majid, Mohammed Abdul

AU - Al-Jabr, Ahmad

AU - Oubei, Hassan M.

AU - Alias, Mohd Sharizal

AU - Anjum, Dalaver H.

AU - Ng, Tien Khee

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2015/6/26

Y1 - 2015/6/26

N2 - The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.

AB - The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.

UR - http://hdl.handle.net/10754/558571

UR - http://digital-library.theiet.org/content/journals/10.1049/el.2015.1658

UR - http://www.scopus.com/inward/record.url?scp=84936865181&partnerID=8YFLogxK

U2 - 10.1049/el.2015.1658

DO - 10.1049/el.2015.1658

M3 - Article

SN - 0013-5194

VL - 51

SP - 1102

EP - 1104

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

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