Fine structure of the exciton spectrum in GaSe

Chi Thanh Le Chi Thanh; C. Depeursinge

doi:10.1016/0038-1098(78)90166-7

Fine structure of the exciton spectrum in GaSe

Chi Thanh Le Chi Thanh^*, C. Depeursinge

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

New optical spectra near the fundamental edge of GaSe have been measured at low temperatures. The observed fine structure is explained in terms of transitions to excitonic groundstates and excited states, in terms of phonon replica of exciton ground states and in terms of excitons bound to intrinsic point defects.

Original language	English (US)
Pages (from-to)	499-503
Number of pages	5
Journal	Solid State Communications
Volume	25
Issue number	7
DOIs	https://doi.org/10.1016/0038-1098(78)90166-7
State	Published - Feb 1978
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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title = "Fine structure of the exciton spectrum in GaSe",

abstract = "New optical spectra near the fundamental edge of GaSe have been measured at low temperatures. The observed fine structure is explained in terms of transitions to excitonic groundstates and excited states, in terms of phonon replica of exciton ground states and in terms of excitons bound to intrinsic point defects.",

author = "{Le Chi Thanh}, {Chi Thanh} and C. Depeursinge",

year = "1978",

month = feb,

doi = "10.1016/0038-1098(78)90166-7",

language = "English (US)",

volume = "25",

pages = "499--503",

journal = "Solid State Communications",

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T1 - Fine structure of the exciton spectrum in GaSe

AU - Le Chi Thanh, Chi Thanh

AU - Depeursinge, C.

PY - 1978/2

Y1 - 1978/2

N2 - New optical spectra near the fundamental edge of GaSe have been measured at low temperatures. The observed fine structure is explained in terms of transitions to excitonic groundstates and excited states, in terms of phonon replica of exciton ground states and in terms of excitons bound to intrinsic point defects.

AB - New optical spectra near the fundamental edge of GaSe have been measured at low temperatures. The observed fine structure is explained in terms of transitions to excitonic groundstates and excited states, in terms of phonon replica of exciton ground states and in terms of excitons bound to intrinsic point defects.

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DO - 10.1016/0038-1098(78)90166-7

M3 - Article

AN - SCOPUS:0017928267

SN - 0038-1098

VL - 25

SP - 499

EP - 503

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

Fine structure of the exciton spectrum in GaSe

Abstract

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