Field Emission of ITO-Coated Vertically Aligned Nanowire Array.

Changhwa Lee; Seokwoo Lee; Seung S Lee

doi:10.1007/s11671-010-9613-2

Field Emission of ITO-Coated Vertically Aligned Nanowire Array.

Changhwa Lee, Seokwoo Lee, Seung S Lee

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Abstract

An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.

Original language	English (US)
Pages (from-to)	1128-1131
Number of pages	4
Journal	Nanoscale Research Letters
Volume	5
Issue number	7
DOIs	https://doi.org/10.1007/s11671-010-9613-2
State	Published - Apr 29 2010
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was partly supported by Brain Korea 21 and Award No KUK-F1-038-02, made by King Abdullah University of Science and Technology (KAUST).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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10.1007/s11671-010-9613-2

https://repository.kaust.edu.sa/bitstream/10754/596842/1/PMC2894224.pdf

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title = "Field Emission of ITO-Coated Vertically Aligned Nanowire Array.",

abstract = "An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.",

author = "Changhwa Lee and Seokwoo Lee and Lee, {Seung S}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was partly supported by Brain Korea 21 and Award No KUK-F1-038-02, made by King Abdullah University of Science and Technology (KAUST). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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doi = "10.1007/s11671-010-9613-2",

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AU - Lee, Seung S

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was partly supported by Brain Korea 21 and Award No KUK-F1-038-02, made by King Abdullah University of Science and Technology (KAUST). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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Y1 - 2010/4/29

N2 - An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.

AB - An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.

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Field Emission of ITO-Coated Vertically Aligned Nanowire Array.

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