Field-effect passivation on silicon nanowire solar cells

Anna Dalmau Mallorquí, Esther Alarcón-Lladó, Ignasi Canales Mundet, Amirreza Kiani, Bénédicte Demaurex, Stefaan De Wolf, Andreas Menzel, Margrit Zacharias, Anna Fontcuberta i Morral*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

72 Scopus citations


Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n-p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography (NF-PSL). We report an efficiency of 9.9% for the best cell, passivated with a SiO2/SiNx stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied.

Original languageEnglish (US)
Pages (from-to)673-681
Number of pages9
JournalNano Research
Issue number2
StatePublished - Feb 2015
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2014, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.


  • field-effect
  • nanowire
  • passivation
  • solar cell
  • surface recombination

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • General Materials Science


Dive into the research topics of 'Field-effect passivation on silicon nanowire solar cells'. Together they form a unique fingerprint.

Cite this