Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO

J. B. Yi; C. C. Lim; G. Z. Xing; H. M. Fan; L. H. Van; S. L. Huang; K. S. Yang; X. L. Huang; X. B. Qin; B. Y. Wang; T. Wu; L. Wang; H. T. Zhang; X. Y. Gao; T. Liu; A. T.S. Wee; Y. P. Feng; J. Ding

doi:10.1103/PhysRevLett.104.137201

Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO

J. B. Yi, C. C. Lim, G. Z. Xing, H. M. Fan, L. H. Van, S. L. Huang, K. S. Yang, X. L. Huang, X. B. Qin, B. Y. Wang, T. Wu, L. Wang, H. T. Zhang, X. Y. Gao, T. Liu, A. T.S. Wee, Y. P. Feng, J. Ding

Research output: Contribution to journal › Article › peer-review

446 Scopus citations

Abstract

We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure.

Original language	English (US)
Article number	137201
Journal	Physical Review Letters
Volume	104
Issue number	13
DOIs	https://doi.org/10.1103/PhysRevLett.104.137201
State	Published - Mar 29 2010
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1103/PhysRevLett.104.137201

Cite this

Yi, J. B., Lim, C. C., Xing, G. Z., Fan, H. M., Van, L. H., Huang, S. L., Yang, K. S., Huang, X. L., Qin, X. B., Wang, B. Y., Wu, T., Wang, L., Zhang, H. T., Gao, X. Y., Liu, T., Wee, A. T. S., Feng, Y. P., & Ding, J. (2010). Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO. Physical Review Letters, 104(13), Article 137201. https://doi.org/10.1103/PhysRevLett.104.137201

@article{fa62711e66914959a70b2170758a4396,

title = "Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO",

abstract = "We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure.",

author = "Yi, {J. B.} and Lim, {C. C.} and Xing, {G. Z.} and Fan, {H. M.} and Van, {L. H.} and Huang, {S. L.} and Yang, {K. S.} and Huang, {X. L.} and Qin, {X. B.} and Wang, {B. Y.} and T. Wu and L. Wang and Zhang, {H. T.} and Gao, {X. Y.} and T. Liu and Wee, {A. T.S.} and Feng, {Y. P.} and J. Ding",

year = "2010",

month = mar,

day = "29",

doi = "10.1103/PhysRevLett.104.137201",

language = "English (US)",

volume = "104",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "13",

}

TY - JOUR

T1 - Ferromagnetism in dilute magnetic semiconductors through defect engineering

T2 - Li-doped ZnO

AU - Yi, J. B.

AU - Lim, C. C.

AU - Xing, G. Z.

AU - Fan, H. M.

AU - Van, L. H.

AU - Huang, S. L.

AU - Yang, K. S.

AU - Huang, X. L.

AU - Qin, X. B.

AU - Wang, B. Y.

AU - Wu, T.

AU - Wang, L.

AU - Zhang, H. T.

AU - Gao, X. Y.

AU - Liu, T.

AU - Wee, A. T.S.

AU - Feng, Y. P.

AU - Ding, J.

PY - 2010/3/29

Y1 - 2010/3/29

N2 - We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure.

AB - We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure.

UR - http://www.scopus.com/inward/record.url?scp=77950288841&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.104.137201

DO - 10.1103/PhysRevLett.104.137201

M3 - Article

AN - SCOPUS:77950288841

SN - 0031-9007

VL - 104

JO - Physical Review Letters

JF - Physical Review Letters

IS - 13

M1 - 137201

ER -

Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this