Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting

Chi Xu; Mao Wang; Xiaodong Zhang; Ye Yuan; Shengqiang Zhou

doi:10.1016/j.nimb.2018.12.049

Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting

Chi Xu, Mao Wang, Xiaodong Zhang, Ye Yuan, Shengqiang Zhou

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In the present work, we show the preparation of (In,Ga,Mn)As films with different Ga concentration by Mn ion implantation and pulsed laser melting. All films are confirmed to be well recrystallized by Rutherford backscattering spectrometry/channeling and to be ferromagnetic by magnetometry measurements, respectively. Their Curie temperatures depend on the Ga concentration. Our results show the perspective of ion implantation in the preparation of different III-Mn-V quaternary alloys as new members of diluted ferromagnetic semiconductors.

Original language	English (US)
Pages (from-to)	31-35
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume	442
DOIs	https://doi.org/10.1016/j.nimb.2018.12.049
State	Published - Jan 17 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Support by the Ion Beam Center (IBC) at HZDR is gratefully acknowledged. The authors thank Klaus Köhler (Fraunhofer Institute for Applied Solid State Physics) for providing InGaAs epilayers. This work is funded by the Helmholtz-Gemeinschaft Deutscher Forschungszentren (HGF-VH-NG-713). The author C. Xu thanks financial support by Chinese Scholarship Council (File No. 201306120027).

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10.1016/j.nimb.2018.12.049

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title = "Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting",

abstract = "In the present work, we show the preparation of (In,Ga,Mn)As films with different Ga concentration by Mn ion implantation and pulsed laser melting. All films are confirmed to be well recrystallized by Rutherford backscattering spectrometry/channeling and to be ferromagnetic by magnetometry measurements, respectively. Their Curie temperatures depend on the Ga concentration. Our results show the perspective of ion implantation in the preparation of different III-Mn-V quaternary alloys as new members of diluted ferromagnetic semiconductors.",

author = "Chi Xu and Mao Wang and Xiaodong Zhang and Ye Yuan and Shengqiang Zhou",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Support by the Ion Beam Center (IBC) at HZDR is gratefully acknowledged. The authors thank Klaus K{\"o}hler (Fraunhofer Institute for Applied Solid State Physics) for providing InGaAs epilayers. This work is funded by the Helmholtz-Gemeinschaft Deutscher Forschungszentren (HGF-VH-NG-713). The author C. Xu thanks financial support by Chinese Scholarship Council (File No. 201306120027).",

year = "2019",

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doi = "10.1016/j.nimb.2018.12.049",

language = "English (US)",

volume = "442",

pages = "31--35",

journal = "Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms",

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T1 - Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting

AU - Xu, Chi

AU - Wang, Mao

AU - Zhang, Xiaodong

AU - Yuan, Ye

AU - Zhou, Shengqiang

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Support by the Ion Beam Center (IBC) at HZDR is gratefully acknowledged. The authors thank Klaus Köhler (Fraunhofer Institute for Applied Solid State Physics) for providing InGaAs epilayers. This work is funded by the Helmholtz-Gemeinschaft Deutscher Forschungszentren (HGF-VH-NG-713). The author C. Xu thanks financial support by Chinese Scholarship Council (File No. 201306120027).

PY - 2019/1/17

Y1 - 2019/1/17

N2 - In the present work, we show the preparation of (In,Ga,Mn)As films with different Ga concentration by Mn ion implantation and pulsed laser melting. All films are confirmed to be well recrystallized by Rutherford backscattering spectrometry/channeling and to be ferromagnetic by magnetometry measurements, respectively. Their Curie temperatures depend on the Ga concentration. Our results show the perspective of ion implantation in the preparation of different III-Mn-V quaternary alloys as new members of diluted ferromagnetic semiconductors.

AB - In the present work, we show the preparation of (In,Ga,Mn)As films with different Ga concentration by Mn ion implantation and pulsed laser melting. All films are confirmed to be well recrystallized by Rutherford backscattering spectrometry/channeling and to be ferromagnetic by magnetometry measurements, respectively. Their Curie temperatures depend on the Ga concentration. Our results show the perspective of ion implantation in the preparation of different III-Mn-V quaternary alloys as new members of diluted ferromagnetic semiconductors.

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U2 - 10.1016/j.nimb.2018.12.049

DO - 10.1016/j.nimb.2018.12.049

M3 - Article

SN - 0168-583X

VL - 442

SP - 31

EP - 35

JO - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

ER -

Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting

Abstract

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