Ferroelectricity in layered bismuth oxide down to 1 nanometer

Qianqian Yang; Jingcong Hu; Yue-Wen Fang; Yueyang Jia; Rui Yang; Shiqing Deng; Yue Lu; Oswaldo Dieguez; Longlong Fan; Dongxing Zheng; Xixiang Zhang; Yongqi Dong; Zhenlin Luo; Zhen Wang; Huanhua Wang; Manling Sui; Xianran Xing; Jun Chen; Jianjun Tian; Linxing Zhang

doi:10.1126/science.abm5134

Ferroelectricity in layered bismuth oxide down to 1 nanometer

Qianqian Yang, Jingcong Hu, Yue-Wen Fang, Yueyang Jia, Rui Yang, Shiqing Deng, Yue Lu, Oswaldo Dieguez, Longlong Fan, Dongxing Zheng, Xixiang Zhang, Yongqi Dong, Zhenlin Luo, Zhen Wang, Huanhua Wang, Manling Sui, Xianran Xing, Jun Chen, Jianjun Tian, Linxing Zhang

Research output: Contribution to journal › Article › peer-review

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Abstract

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair–driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices.

Original language	English (US)
Pages (from-to)	1218-1224
Number of pages	7
Journal	Science
Volume	379
Issue number	6638
DOIs	https://doi.org/10.1126/science.abm5134
State	Published - Mar 24 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-03-27
Acknowledgements: This work was supported by the National Key Research and Development Program of China (2018YFA0703700, 2017YFE0119700, and 2020YFA0406202), the National Natural Science Foundation of China (21801013, 51774034, 51961135107, 62104140, 12175235, 22090042, 12074016, 11704041, and 12274009), the Fundamental Research Funds for the Central Universities (FRF-IDRY-19-007 and FRF-TP-19-055A2Z), the National Program for Support of Top-notch Young Professionals, the Young Elite Scientists Sponsorship Program by CAST (2019-2021QNRC), and Lingang Laboratory Open Research Fund (grant LG-QS-202202-11). Use of the Beijing Synchrotron Radiation Facility (1W1A beamlines, China) of the Chinese Academy of Sciences is acknowledged. Y.-W.F. acknowledges the support of Masaki Azuma’s group during his stay at the Tokyo Institute of Technology. Y.L. acknowledges the support of the Beijing Innovation Team Building Program (grant no. IDHT20190503), the Beijing Natural Science Foundation (Z210016), the Research and Development Project from the Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering (2022SX-TD001), and the General Program of Science and Technology Development Project of Beijing Municipal Education Commission (KM202110005003).

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https://repository.kaust.edu.sa/bitstream/10754/690594/1/20230223-abm5134_manuscript%20-with%20section%20heading-yqq%20-V3.pdf

Cite this

@article{55fb68e3643640a88cf9edb7f4cded6a,

title = "Ferroelectricity in layered bismuth oxide down to 1 nanometer",

abstract = "Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair–driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices.",

author = "Qianqian Yang and Jingcong Hu and Yue-Wen Fang and Yueyang Jia and Rui Yang and Shiqing Deng and Yue Lu and Oswaldo Dieguez and Longlong Fan and Dongxing Zheng and Xixiang Zhang and Yongqi Dong and Zhenlin Luo and Zhen Wang and Huanhua Wang and Manling Sui and Xianran Xing and Jun Chen and Jianjun Tian and Linxing Zhang",

note = "KAUST Repository Item: Exported on 2023-03-27 Acknowledgements: This work was supported by the National Key Research and Development Program of China (2018YFA0703700, 2017YFE0119700, and 2020YFA0406202), the National Natural Science Foundation of China (21801013, 51774034, 51961135107, 62104140, 12175235, 22090042, 12074016, 11704041, and 12274009), the Fundamental Research Funds for the Central Universities (FRF-IDRY-19-007 and FRF-TP-19-055A2Z), the National Program for Support of Top-notch Young Professionals, the Young Elite Scientists Sponsorship Program by CAST (2019-2021QNRC), and Lingang Laboratory Open Research Fund (grant LG-QS-202202-11). Use of the Beijing Synchrotron Radiation Facility (1W1A beamlines, China) of the Chinese Academy of Sciences is acknowledged. Y.-W.F. acknowledges the support of Masaki Azuma{\textquoteright}s group during his stay at the Tokyo Institute of Technology. Y.L. acknowledges the support of the Beijing Innovation Team Building Program (grant no. IDHT20190503), the Beijing Natural Science Foundation (Z210016), the Research and Development Project from the Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering (2022SX-TD001), and the General Program of Science and Technology Development Project of Beijing Municipal Education Commission (KM202110005003).",

year = "2023",

month = mar,

day = "24",

doi = "10.1126/science.abm5134",

language = "English (US)",

volume = "379",

pages = "1218--1224",

journal = "Science",

issn = "0036-8075",

publisher = "AMER ASSOC ADVANCEMENT SCIENCE",

number = "6638",

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TY - JOUR

T1 - Ferroelectricity in layered bismuth oxide down to 1 nanometer

AU - Yang, Qianqian

AU - Hu, Jingcong

AU - Fang, Yue-Wen

AU - Jia, Yueyang

AU - Yang, Rui

AU - Deng, Shiqing

AU - Lu, Yue

AU - Dieguez, Oswaldo

AU - Fan, Longlong

AU - Zheng, Dongxing

AU - Zhang, Xixiang

AU - Dong, Yongqi

AU - Luo, Zhenlin

AU - Wang, Zhen

AU - Wang, Huanhua

AU - Sui, Manling

AU - Xing, Xianran

AU - Chen, Jun

AU - Tian, Jianjun

AU - Zhang, Linxing

N1 - KAUST Repository Item: Exported on 2023-03-27 Acknowledgements: This work was supported by the National Key Research and Development Program of China (2018YFA0703700, 2017YFE0119700, and 2020YFA0406202), the National Natural Science Foundation of China (21801013, 51774034, 51961135107, 62104140, 12175235, 22090042, 12074016, 11704041, and 12274009), the Fundamental Research Funds for the Central Universities (FRF-IDRY-19-007 and FRF-TP-19-055A2Z), the National Program for Support of Top-notch Young Professionals, the Young Elite Scientists Sponsorship Program by CAST (2019-2021QNRC), and Lingang Laboratory Open Research Fund (grant LG-QS-202202-11). Use of the Beijing Synchrotron Radiation Facility (1W1A beamlines, China) of the Chinese Academy of Sciences is acknowledged. Y.-W.F. acknowledges the support of Masaki Azuma’s group during his stay at the Tokyo Institute of Technology. Y.L. acknowledges the support of the Beijing Innovation Team Building Program (grant no. IDHT20190503), the Beijing Natural Science Foundation (Z210016), the Research and Development Project from the Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering (2022SX-TD001), and the General Program of Science and Technology Development Project of Beijing Municipal Education Commission (KM202110005003).

PY - 2023/3/24

Y1 - 2023/3/24

N2 - Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair–driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices.

AB - Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair–driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices.

UR - http://hdl.handle.net/10754/690594

UR - https://www.science.org/doi/10.1126/science.abm5134

U2 - 10.1126/science.abm5134

DO - 10.1126/science.abm5134

M3 - Article

C2 - 36952424

SN - 0036-8075

VL - 379

SP - 1218

EP - 1224

JO - Science

JF - Science

IS - 6638

ER -

Ferroelectricity in layered bismuth oxide down to 1 nanometer

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