Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

L. Liao; H. J. Fan; B. Yan; Z. Zhang; L. L. Chen; B. S. Li; G. Z. Xing; Z. X. Shen; T. Wu; X. W. Sun; J. Wang; T. Yu

doi:10.1021/nn800808s

Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

L. Liao, H. J. Fan, B. Yan, Z. Zhang, L. L. Chen, B. S. Li, G. Z. Xing, Z. X. Shen, T. Wu, X. W. Sun, J. Wang, T. Yu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

91 Scopus citations

Abstract

We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr _0.3Ti _0.7)O ₃ (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO ₂ gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I-V _g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 10 ³) on/off ratio at zero gate voltage. Our results give a proof-ofprinciple demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide).

Original language	English (US)
Pages (from-to)	700-706
Number of pages	7
Journal	ACS Nano
Volume	3
Issue number	3
DOIs	https://doi.org/10.1021/nn800808s
State	Published - Mar 24 2009
Externally published	Yes

Keywords

Depletion
Ferroelectric
Field effect transistor
Nanowires
Nonvolatile memory
PZT
ZnO

ASJC Scopus subject areas

General Materials Science
General Engineering
General Physics and Astronomy

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10.1021/nn800808s

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@article{2c183097564f45ee9a19aa80a44cfc9e,

title = "Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications",

abstract = "We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr 0.3Ti 0.7)O 3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO 2 gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I-V g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 10 3) on/off ratio at zero gate voltage. Our results give a proof-ofprinciple demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide).",

keywords = "Depletion, Ferroelectric, Field effect transistor, Nanowires, Nonvolatile memory, PZT, ZnO",

author = "L. Liao and Fan, {H. J.} and B. Yan and Z. Zhang and Chen, {L. L.} and Li, {B. S.} and Xing, {G. Z.} and Shen, {Z. X.} and T. Wu and Sun, {X. W.} and J. Wang and T. Yu",

year = "2009",

month = mar,

day = "24",

doi = "10.1021/nn800808s",

language = "English (US)",

volume = "3",

pages = "700--706",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

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TY - JOUR

T1 - Ferroelectric transistors with nanowire channel

T2 - Toward nonvolatile memory applications

AU - Liao, L.

AU - Fan, H. J.

AU - Yan, B.

AU - Zhang, Z.

AU - Chen, L. L.

AU - Li, B. S.

AU - Xing, G. Z.

AU - Shen, Z. X.

AU - Wu, T.

AU - Sun, X. W.

AU - Wang, J.

AU - Yu, T.

PY - 2009/3/24

Y1 - 2009/3/24

N2 - We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr 0.3Ti 0.7)O 3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO 2 gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I-V g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 10 3) on/off ratio at zero gate voltage. Our results give a proof-ofprinciple demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide).

AB - We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr 0.3Ti 0.7)O 3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO 2 gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I-V g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 10 3) on/off ratio at zero gate voltage. Our results give a proof-ofprinciple demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide).

KW - Depletion

KW - Ferroelectric

KW - Field effect transistor

KW - Nanowires

KW - Nonvolatile memory

KW - PZT

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=65249119657&partnerID=8YFLogxK

U2 - 10.1021/nn800808s

DO - 10.1021/nn800808s

M3 - Article

C2 - 19249845

AN - SCOPUS:65249119657

SN - 1936-0851

VL - 3

SP - 700

EP - 706

JO - ACS Nano

JF - ACS Nano

IS - 3

ER -

Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

Abstract

Keywords

ASJC Scopus subject areas

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