Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

L. Liao, H. J. Fan, B. Yan, Z. Zhang, L. L. Chen, B. S. Li, G. Z. Xing, Z. X. Shen, T. Wu, X. W. Sun, J. Wang, T. Yu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

89 Scopus citations


We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr 0.3Ti 0.7)O 3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO 2 gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I-V g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 10 3) on/off ratio at zero gate voltage. Our results give a proof-ofprinciple demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide).

Original languageEnglish (US)
Pages (from-to)700-706
Number of pages7
JournalACS Nano
Issue number3
StatePublished - Mar 24 2009
Externally publishedYes


  • Depletion
  • Ferroelectric
  • Field effect transistor
  • Nanowires
  • Nonvolatile memory
  • PZT
  • ZnO

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy


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