Ferroelectric Polarization Rotation in Order–Disorder-Type LiNbO3 Thin Films

Tae Sup Yoo, Sang A Lee, Changjae Roh, Seunghun Kang, Daehee Seol, Xinwei Guan, Jong-Seong Bae, Jiwoong Kim, Young-Min Kim, Hu Young Jeong, Seunggyo Jeong, Ahmed Yousef Mohamed, Deok-Yong Cho, Ji Young Jo, Sungkyun Park, Tao Wu, Yunseok Kim, Jongseok Lee, Woo Seok Choi

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important dielectric phenomena such as piezoelectric response near the morphotropic phase boundaries and practical applications such as ferroelectric memory. In this study, we report the observation of continuous rotation of ferroelectric polarization in order-disorder-type LiNbO3 thin films. The spontaneous polarization could be tilted from an out-of-plane to an in-plane direction in the thin film by controlling the Li vacancy concentration within the hexagonal lattice framework. Partial inclusion of monoclinic-like phase is attributed to the breaking of macroscopic inversion symmetry along different directions and the emergence of ferroelectric polarization along the in-plane direction.
Original languageEnglish (US)
Pages (from-to)41471-41478
Number of pages8
JournalACS Applied Materials & Interfaces
Volume10
Issue number48
DOIs
StatePublished - Nov 8 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: We thank J. Lee for insightful discussion. This work was supported by Basic Science Research Programs through the National Research Foundation of Korea (NRF) (NRF-2017R1A2B4011083, NRF-2016R1A6A3A11934867 (S.A.L.), NRF-2015R1A5A1009962 (C.R. and J.L.), NRF-2014R1A4A1008474 (S.K., D.S., and Y.K.), NRF-2018R1D1A1B07045663 (J.K. and S.P.), NRF-2015R1C1A1A02037514 (D.-Y.C.), NRF-2016R1D1A1A02937051 (J.Y.J.), and NRF-2015M3D1A1070672 (Y.M.K.). Y.M.K. was also supported by the Institute for Basic Science (IBS-R011-D1)).

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