TY - GEN
T1 - Failure analysis of NSOP problem due to Al fluoride oxide on microchip Al bondpads
AU - Zhao, Siping
AU - Hua, Younan
AU - Ramesh, Rao
AU - Li, Kun
PY - 2006
Y1 - 2006
N2 - A NSOP due to Al fluoride oxide case was investigated. The NSOP problem on microchip Al bondpads was reported. SEM, EDX, TEM and Auger FA techniques were used to identify the root cause. Optical inspection did not show any abnormality, however, high magnification SEM inspection found the "white dof"-like defects. TEM and Auger analysis results showed that a thicker oxide layer on bondpads, which was about 200-300 A. After studies on failure mechanism, it was concluded that the thicker layer detected by TEM was not Al oxide layer (Al2O3), but it was Al fluoride oxide- Al xOyFz. which was due to F contamination during polyimide ashing process. In this paper we will further discuss the failure mechanism proposed and explain the formation of the Al fluoride oxide-Al xOyFz In this paper, the possible root cause and eliminating solution are also studied. After changing a new dedicated ashing process machine, the F contamination was eliminated.
AB - A NSOP due to Al fluoride oxide case was investigated. The NSOP problem on microchip Al bondpads was reported. SEM, EDX, TEM and Auger FA techniques were used to identify the root cause. Optical inspection did not show any abnormality, however, high magnification SEM inspection found the "white dof"-like defects. TEM and Auger analysis results showed that a thicker oxide layer on bondpads, which was about 200-300 A. After studies on failure mechanism, it was concluded that the thicker layer detected by TEM was not Al oxide layer (Al2O3), but it was Al fluoride oxide- Al xOyFz. which was due to F contamination during polyimide ashing process. In this paper we will further discuss the failure mechanism proposed and explain the formation of the Al fluoride oxide-Al xOyFz In this paper, the possible root cause and eliminating solution are also studied. After changing a new dedicated ashing process machine, the F contamination was eliminated.
UR - http://www.scopus.com/inward/record.url?scp=35148865752&partnerID=8YFLogxK
U2 - 10.1109/SMELEC.2006.380783
DO - 10.1109/SMELEC.2006.380783
M3 - Conference contribution
AN - SCOPUS:35148865752
SN - 0780397312
SN - 9780780397316
T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
SP - 970
EP - 976
BT - ICSE 2006
T2 - 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
Y2 - 29 November 2006 through 1 December 2006
ER -