Facile fabrication of ZnO nanowire memory device based on chemically-treated surface defects

Woojin Park, Tae Hyeon Kim, Jae Hyeon Nam, Hye Yeon Jang, Yusin Pak, Jung-Wook Min, Joho Yun, Byungjin Cho

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In this study, we demonstrate a transistor-type ZnO nanowire (NW) memory device based on the surface defect states of a rough ZnO NW, which is obtained by introducing facile H2O2 solution treatment. The surface defect states of the ZnO NW are validated by photoluminescence characterization. A memory device based on the rough ZnO NW exhibits clearly separated bi-stable states (ON and OFF states). A significant current fluctuation does not exist during repetitive endurance cycling test. Stable memory retention characteristics are also achieved at a high temperature of 85 °C and at room temperature. The surface-treated ZnO NW device also exhibits dynamically well-responsive pulse switching under a sequential pulse test configuration, thereby indicating its potential practical memory applications. The simple chemical treatment strategy can be widely used for modulating the surface states of diverse low-dimensional materials.
Original languageEnglish (US)
Pages (from-to)155201
Issue number15
StatePublished - Feb 12 2019

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