Facile fabrication of ZnO nanowire memory device based on chemically-treated surface defects

Woojin Park, Tae Hyeon Kim, Jae Hyeon Nam, Hye Yeon Jang, Yusin Pak, Jung-Wook Min, Joho Yun, Byungjin Cho

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3 Scopus citations

Abstract

In this study, we demonstrate a transistor-type ZnO nanowire (NW) memory device based on the surface defect states of a rough ZnO NW, which is obtained by introducing facile H2O2 solution treatment. The surface defect states of the ZnO NW are validated by photoluminescence characterization. A memory device based on the rough ZnO NW exhibits clearly separated bi-stable states (ON and OFF states). A significant current fluctuation does not exist during repetitive endurance cycling test. Stable memory retention characteristics are also achieved at a high temperature of 85 °C and at room temperature. The surface-treated ZnO NW device also exhibits dynamically well-responsive pulse switching under a sequential pulse test configuration, thereby indicating its potential practical memory applications. The simple chemical treatment strategy can be widely used for modulating the surface states of diverse low-dimensional materials.
Original languageEnglish (US)
Pages (from-to)155201
JournalNanotechnology
Volume30
Issue number15
DOIs
StatePublished - Feb 12 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT; Ministry of Science and ICT) (No. 2017R1C1B1005076). This research was also financially supported by the Ministry of Trade, Industry and Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT) through the National Innovation Cluster R&D program (P0006704).

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