Abstract
High output power very-small-aperture laser has been created on 650 nm edge emitting laser diodes. The far-field output power is 0.4 mW at the 25 mA driving current, and the highest output power exceeds 1 mW. The special fabrication process is described and the failure mechanism leading to the short lifetime of the devices is discussed.
Original language | English (US) |
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Pages (from-to) | 5609-5613 |
Number of pages | 5 |
Journal | Wuli Xuebao/Acta Physica Sinica |
Volume | 54 |
Issue number | 12 |
State | Published - Dec 1 2005 |
Externally published | Yes |
Bibliographical note
Generated from Scopus record by KAUST IRTS on 2022-09-13ASJC Scopus subject areas
- General Physics and Astronomy