Fabrication of wide-band electro-absorption waveguide modulator arrays using quantum well-intermixing process

S. L. Ng; H. S. Djie; H. S. Lim; Y. L. Lam; Y. C. Chan; B. S. Ooi; V. Aimez; J. Beauvais; J. Beerens

doi:10.1016/j.optcom.2003.08.016

Fabrication of wide-band electro-absorption waveguide modulator arrays using quantum well-intermixing process

S. L. Ng, H. S. Djie^*, H. S. Lim, Y. L. Lam, Y. C. Chan, B. S. Ooi, V. Aimez, J. Beauvais, J. Beerens

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The present paper reports on the demonstration of wide optical bandwidth electro-absorption waveguide modulator arrays fabricated on a single InGaAs/InGaAsP wafer chip using a gray-mask-based quantum well intermixing. Both micro-Raman and photoluminescence measurements have shown that the quality of the material concerning is maintained after the ion implantation-induced process. Multiple energy bandgap sections for absorbing at different wavelengths with a large modulation depth have been achieved in modulator arrays, with around 60 nm as the modulating bandwidth. An intensity modulation depth of about -16 dB has been obtained at -5 V bias for these modulator arrays.

Original language	English (US)
Pages (from-to)	191-197
Number of pages	7
Journal	Optics Communications
Volume	226
Issue number	1-6
DOIs	https://doi.org/10.1016/j.optcom.2003.08.016
State	Published - Oct 15 2003
Externally published	Yes

Keywords

Electro-absorption
Gray-mask
Modulator arrays
Quantum well intermixing

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Physical and Theoretical Chemistry
Electrical and Electronic Engineering

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10.1016/j.optcom.2003.08.016

Cite this

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title = "Fabrication of wide-band electro-absorption waveguide modulator arrays using quantum well-intermixing process",

abstract = "The present paper reports on the demonstration of wide optical bandwidth electro-absorption waveguide modulator arrays fabricated on a single InGaAs/InGaAsP wafer chip using a gray-mask-based quantum well intermixing. Both micro-Raman and photoluminescence measurements have shown that the quality of the material concerning is maintained after the ion implantation-induced process. Multiple energy bandgap sections for absorbing at different wavelengths with a large modulation depth have been achieved in modulator arrays, with around 60 nm as the modulating bandwidth. An intensity modulation depth of about -16 dB has been obtained at -5 V bias for these modulator arrays.",

keywords = "Electro-absorption, Gray-mask, Modulator arrays, Quantum well intermixing",

author = "Ng, {S. L.} and Djie, {H. S.} and Lim, {H. S.} and Lam, {Y. L.} and Chan, {Y. C.} and Ooi, {B. S.} and V. Aimez and J. Beauvais and J. Beerens",

year = "2003",

month = oct,

day = "15",

doi = "10.1016/j.optcom.2003.08.016",

language = "English (US)",

volume = "226",

pages = "191--197",

journal = "Optics Communications",

issn = "0030-4018",

publisher = "Elsevier",

number = "1-6",

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TY - JOUR

T1 - Fabrication of wide-band electro-absorption waveguide modulator arrays using quantum well-intermixing process

AU - Ng, S. L.

AU - Djie, H. S.

AU - Lim, H. S.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Ooi, B. S.

AU - Aimez, V.

AU - Beauvais, J.

AU - Beerens, J.

PY - 2003/10/15

Y1 - 2003/10/15

N2 - The present paper reports on the demonstration of wide optical bandwidth electro-absorption waveguide modulator arrays fabricated on a single InGaAs/InGaAsP wafer chip using a gray-mask-based quantum well intermixing. Both micro-Raman and photoluminescence measurements have shown that the quality of the material concerning is maintained after the ion implantation-induced process. Multiple energy bandgap sections for absorbing at different wavelengths with a large modulation depth have been achieved in modulator arrays, with around 60 nm as the modulating bandwidth. An intensity modulation depth of about -16 dB has been obtained at -5 V bias for these modulator arrays.

AB - The present paper reports on the demonstration of wide optical bandwidth electro-absorption waveguide modulator arrays fabricated on a single InGaAs/InGaAsP wafer chip using a gray-mask-based quantum well intermixing. Both micro-Raman and photoluminescence measurements have shown that the quality of the material concerning is maintained after the ion implantation-induced process. Multiple energy bandgap sections for absorbing at different wavelengths with a large modulation depth have been achieved in modulator arrays, with around 60 nm as the modulating bandwidth. An intensity modulation depth of about -16 dB has been obtained at -5 V bias for these modulator arrays.

KW - Electro-absorption

KW - Gray-mask

KW - Modulator arrays

KW - Quantum well intermixing

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U2 - 10.1016/j.optcom.2003.08.016

DO - 10.1016/j.optcom.2003.08.016

M3 - Article

AN - SCOPUS:0141894292

SN - 0030-4018

VL - 226

SP - 191

EP - 197

JO - Optics Communications

JF - Optics Communications

IS - 1-6

ER -

Fabrication of wide-band electro-absorption waveguide modulator arrays using quantum well-intermixing process

Abstract

Keywords

ASJC Scopus subject areas

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