Fabrication of ultra-thin strained silicon on insulator

T. S. Drake*, C. Ní Chléirigh, M. L. Lee, A. J. Pitera, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N. Klymko, J. L. Hoyt

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


A bond and etch back technique for the fabrication of 13-nm-thick, strained silicon directly on insulator has been developed. The use of a double etch stop allows the transfer of a thin strained silicon layer with across-wafer thickness uniformity comparable to the as-grown epitaxial layers. Surface roughness of less than 1 nm was achieved. Raman analysis confirms strain remains in the thin silicon layers after the removal of the SiGe that induced the strain. Ultra-thin strained silicon-on-insulator (SSOI) substrates are promising for the fabrication of ultra-thin body and double-gate, strained Si metal-oxide semiconductor field-effect transistors (MOSFETs).

Original languageEnglish (US)
Pages (from-to)972-975
Number of pages4
JournalJournal of Electronic Materials
Issue number9
StatePublished - Sep 2003
Externally publishedYes

Bibliographical note

Funding Information:
We acknowledge the contributions of B. Alamariu, K. Broderick, and D. Adams of the Microsystems Technology Laboratories at MIT. Funding provided by an SRC Fellowship and the MARCO MSD Focus Research Center. The support and assistance of Ken Rim (IBM) in the Raman analysis of these samples is greatly appreciated.


  • SOI
  • SSOI
  • Selective etch
  • SiGe
  • Strained silicon
  • Wafer bonding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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