Fabrication of ultra-thin strained silicon on insulator

T. S. Drake; C. Ní Chléirigh; M. L. Lee; A. J. Pitera; E. A. Fitzgerald; D. A. Antoniadis; D. H. Anjum; J. Li; R. Hull; N. Klymko; J. L. Hoyt

doi:10.1007/s11664-003-0232-x

Fabrication of ultra-thin strained silicon on insulator

T. S. Drake^*, C. Ní Chléirigh, M. L. Lee, A. J. Pitera, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N. Klymko, J. L. Hoyt

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

A bond and etch back technique for the fabrication of 13-nm-thick, strained silicon directly on insulator has been developed. The use of a double etch stop allows the transfer of a thin strained silicon layer with across-wafer thickness uniformity comparable to the as-grown epitaxial layers. Surface roughness of less than 1 nm was achieved. Raman analysis confirms strain remains in the thin silicon layers after the removal of the SiGe that induced the strain. Ultra-thin strained silicon-on-insulator (SSOI) substrates are promising for the fabrication of ultra-thin body and double-gate, strained Si metal-oxide semiconductor field-effect transistors (MOSFETs).

Original language	English (US)
Pages (from-to)	972-975
Number of pages	4
Journal	Journal of Electronic Materials
Volume	32
Issue number	9
DOIs	https://doi.org/10.1007/s11664-003-0232-x
State	Published - Sep 2003
Externally published	Yes

Bibliographical note

Funding Information:
We acknowledge the contributions of B. Alamariu, K. Broderick, and D. Adams of the Microsystems Technology Laboratories at MIT. Funding provided by an SRC Fellowship and the MARCO MSD Focus Research Center. The support and assistance of Ken Rim (IBM) in the Raman analysis of these samples is greatly appreciated.

Keywords

SOI
SSOI
Selective etch
SiGe
Strained silicon
Wafer bonding

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1007/s11664-003-0232-x

Cite this

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title = "Fabrication of ultra-thin strained silicon on insulator",

abstract = "A bond and etch back technique for the fabrication of 13-nm-thick, strained silicon directly on insulator has been developed. The use of a double etch stop allows the transfer of a thin strained silicon layer with across-wafer thickness uniformity comparable to the as-grown epitaxial layers. Surface roughness of less than 1 nm was achieved. Raman analysis confirms strain remains in the thin silicon layers after the removal of the SiGe that induced the strain. Ultra-thin strained silicon-on-insulator (SSOI) substrates are promising for the fabrication of ultra-thin body and double-gate, strained Si metal-oxide semiconductor field-effect transistors (MOSFETs).",

keywords = "SOI, SSOI, Selective etch, SiGe, Strained silicon, Wafer bonding",

author = "Drake, {T. S.} and {N{\'i} Chl{\'e}irigh}, C. and Lee, {M. L.} and Pitera, {A. J.} and Fitzgerald, {E. A.} and Antoniadis, {D. A.} and Anjum, {D. H.} and J. Li and R. Hull and N. Klymko and Hoyt, {J. L.}",

note = "Funding Information: We acknowledge the contributions of B. Alamariu, K. Broderick, and D. Adams of the Microsystems Technology Laboratories at MIT. Funding provided by an SRC Fellowship and the MARCO MSD Focus Research Center. The support and assistance of Ken Rim (IBM) in the Raman analysis of these samples is greatly appreciated.",

year = "2003",

month = sep,

doi = "10.1007/s11664-003-0232-x",

language = "English (US)",

volume = "32",

pages = "972--975",

journal = "Journal of Electronic Materials",

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publisher = "Springer New York",

number = "9",

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TY - JOUR

T1 - Fabrication of ultra-thin strained silicon on insulator

AU - Drake, T. S.

AU - Ní Chléirigh, C.

AU - Lee, M. L.

AU - Pitera, A. J.

AU - Fitzgerald, E. A.

AU - Antoniadis, D. A.

AU - Anjum, D. H.

AU - Li, J.

AU - Hull, R.

AU - Klymko, N.

AU - Hoyt, J. L.

N1 - Funding Information: We acknowledge the contributions of B. Alamariu, K. Broderick, and D. Adams of the Microsystems Technology Laboratories at MIT. Funding provided by an SRC Fellowship and the MARCO MSD Focus Research Center. The support and assistance of Ken Rim (IBM) in the Raman analysis of these samples is greatly appreciated.

PY - 2003/9

Y1 - 2003/9

N2 - A bond and etch back technique for the fabrication of 13-nm-thick, strained silicon directly on insulator has been developed. The use of a double etch stop allows the transfer of a thin strained silicon layer with across-wafer thickness uniformity comparable to the as-grown epitaxial layers. Surface roughness of less than 1 nm was achieved. Raman analysis confirms strain remains in the thin silicon layers after the removal of the SiGe that induced the strain. Ultra-thin strained silicon-on-insulator (SSOI) substrates are promising for the fabrication of ultra-thin body and double-gate, strained Si metal-oxide semiconductor field-effect transistors (MOSFETs).

AB - A bond and etch back technique for the fabrication of 13-nm-thick, strained silicon directly on insulator has been developed. The use of a double etch stop allows the transfer of a thin strained silicon layer with across-wafer thickness uniformity comparable to the as-grown epitaxial layers. Surface roughness of less than 1 nm was achieved. Raman analysis confirms strain remains in the thin silicon layers after the removal of the SiGe that induced the strain. Ultra-thin strained silicon-on-insulator (SSOI) substrates are promising for the fabrication of ultra-thin body and double-gate, strained Si metal-oxide semiconductor field-effect transistors (MOSFETs).

KW - SOI

KW - SSOI

KW - Selective etch

KW - SiGe

KW - Strained silicon

KW - Wafer bonding

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U2 - 10.1007/s11664-003-0232-x

DO - 10.1007/s11664-003-0232-x

M3 - Article

AN - SCOPUS:0141453032

SN - 0361-5235

VL - 32

SP - 972

EP - 975

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 9

ER -

Fabrication of ultra-thin strained silicon on insulator

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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