Fabrication of ultra-thin strained silicon on insulator

T. S. Drake*, C. Ní Chléirigh, M. L. Lee, A. J. Pitera, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N. Klymko, J. L. Hoyt

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    33 Scopus citations


    A bond and etch back technique for the fabrication of 13-nm-thick, strained silicon directly on insulator has been developed. The use of a double etch stop allows the transfer of a thin strained silicon layer with across-wafer thickness uniformity comparable to the as-grown epitaxial layers. Surface roughness of less than 1 nm was achieved. Raman analysis confirms strain remains in the thin silicon layers after the removal of the SiGe that induced the strain. Ultra-thin strained silicon-on-insulator (SSOI) substrates are promising for the fabrication of ultra-thin body and double-gate, strained Si metal-oxide semiconductor field-effect transistors (MOSFETs).

    Original languageEnglish (US)
    Pages (from-to)972-975
    Number of pages4
    JournalJournal of Electronic Materials
    Issue number9
    StatePublished - Sep 2003


    • SOI
    • SSOI
    • Selective etch
    • SiGe
    • Strained silicon
    • Wafer bonding

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry


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