Abstract
We fabricated stretchable molybdenum disulfide thin-film transistors (MoS2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm2/(V·s) and an on/off current ratio of 104 with a notably low threshold voltage (∼1 V). Furthermore, our MoS2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS2 films for stretchable electronics.
Original language | English (US) |
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Article number | 023505 |
Journal | Applied Physics Letters |
Volume | 103 |
Issue number | 2 |
DOIs | |
State | Published - Jul 8 2013 |
Externally published | Yes |
Bibliographical note
Funding Information:T.T. was partially supported by a Waseda University Grant (2011A-501) and the Funding Program for the Next Generation of World-Leading Researchers. Y.I. was supported by Strategic International Collaborative Research Program (SICORP), Japan Science and Technology Agency, Grant-in-Aid for Scientific Research (S) (No. 21224009), for Specially Promoted Research (No. 25000003), and the “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)” from JSPS, Japan. L. J. Li acknowledges the support of the Academia Sinica and National Science Council in Taiwan (NSC-99-2112-M-001-021-MY3).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)