Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics

Jiang Pu, Yijin Zhang, Yoshifumi Wada, Jacob Tse-Wei Wang, Lain Jong Li, Yoshihiro Iwasa, Taishi Takenobu

Research output: Contribution to journalArticlepeer-review

95 Scopus citations


We fabricated stretchable molybdenum disulfide thin-film transistors (MoS2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm2/(V·s) and an on/off current ratio of 104 with a notably low threshold voltage (∼1 V). Furthermore, our MoS2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS2 films for stretchable electronics.

Original languageEnglish (US)
Article number023505
JournalApplied Physics Letters
Issue number2
StatePublished - Jul 8 2013
Externally publishedYes

Bibliographical note

Funding Information:
T.T. was partially supported by a Waseda University Grant (2011A-501) and the Funding Program for the Next Generation of World-Leading Researchers. Y.I. was supported by Strategic International Collaborative Research Program (SICORP), Japan Science and Technology Agency, Grant-in-Aid for Scientific Research (S) (No. 21224009), for Specially Promoted Research (No. 25000003), and the “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)” from JSPS, Japan. L. J. Li acknowledges the support of the Academia Sinica and National Science Council in Taiwan (NSC-99-2112-M-001-021-MY3).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics'. Together they form a unique fingerprint.

Cite this