Fabrication of stretchable MoS
                        2
                         thin-film transistors using elastic ion-gel gate dielectrics

Jiang Pu; Yijin Zhang; Yoshifumi Wada; Jacob Tse-Wei Wang; Lain-Jong Li; Yoshihiro Iwasa; Taishi Takenobu

doi:10.1063/1.4813311

Fabrication of stretchable MoS ₂ thin-film transistors using elastic ion-gel gate dielectrics

Jiang Pu, Yijin Zhang, Yoshifumi Wada, Jacob Tse-Wei Wang, Lain-Jong Li, Yoshihiro Iwasa, Taishi Takenobu

Physical Science and Engineering

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

We fabricated stretchable molybdenum disulfide thin-film transistors (MoS ₂ TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm ² /(V·s) and an on/off current ratio of 10 ⁴ with a notably low threshold voltage (∼1 V). Furthermore, our MoS ₂ TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS ₂ films for stretchable electronics.

Original language	English (US)
Article number	023505
Journal	Applied Physics Letters
Volume	103
Issue number	2
DOIs	https://doi.org/10.1063/1.4813311
State	Published - Jul 8 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4813311

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title = " Fabrication of stretchable MoS 2 thin-film transistors using elastic ion-gel gate dielectrics ",

abstract = " We fabricated stretchable molybdenum disulfide thin-film transistors (MoS 2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm 2 /(V·s) and an on/off current ratio of 10 4 with a notably low threshold voltage (∼1 V). Furthermore, our MoS 2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS 2 films for stretchable electronics.",

author = "Jiang Pu and Yijin Zhang and Yoshifumi Wada and {Tse-Wei Wang}, Jacob and Lain-Jong Li and Yoshihiro Iwasa and Taishi Takenobu",

year = "2013",

month = jul,

day = "8",

doi = "10.1063/1.4813311",

language = "English (US)",

volume = "103",

journal = "Applied Physics Letters",

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Fabrication of stretchable MoS ₂ thin-film transistors using elastic ion-gel gate dielectrics . / Pu, Jiang; Zhang, Yijin; Wada, Yoshifumi et al.

In: Applied Physics Letters, Vol. 103, No. 2, 023505, 08.07.2013.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Fabrication of stretchable MoS 2 thin-film transistors using elastic ion-gel gate dielectrics

AU - Pu, Jiang

AU - Zhang, Yijin

AU - Wada, Yoshifumi

AU - Tse-Wei Wang, Jacob

AU - Li, Lain-Jong

AU - Iwasa, Yoshihiro

AU - Takenobu, Taishi

PY - 2013/7/8

Y1 - 2013/7/8

N2 - We fabricated stretchable molybdenum disulfide thin-film transistors (MoS 2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm 2 /(V·s) and an on/off current ratio of 10 4 with a notably low threshold voltage (∼1 V). Furthermore, our MoS 2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS 2 films for stretchable electronics.

AB - We fabricated stretchable molybdenum disulfide thin-film transistors (MoS 2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm 2 /(V·s) and an on/off current ratio of 10 4 with a notably low threshold voltage (∼1 V). Furthermore, our MoS 2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS 2 films for stretchable electronics.

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DO - 10.1063/1.4813311

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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M1 - 023505

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Fabrication of stretchable MoS ₂ thin-film transistors using elastic ion-gel gate dielectrics

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