Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics

Jiang Pu; Yijin Zhang; Yoshifumi Wada; Jacob Tse-Wei Wang; Lain Jong Li; Yoshihiro Iwasa; Taishi Takenobu

doi:10.1063/1.4813311

Fabrication of stretchable MoS₂ thin-film transistors using elastic ion-gel gate dielectrics

Jiang Pu, Yijin Zhang, Yoshifumi Wada, Jacob Tse-Wei Wang, Lain Jong Li, Yoshihiro Iwasa, Taishi Takenobu

Research output: Contribution to journal › Article › peer-review

95 Scopus citations

Abstract

We fabricated stretchable molybdenum disulfide thin-film transistors (MoS₂ TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm²/(V·s) and an on/off current ratio of 10⁴ with a notably low threshold voltage (∼1 V). Furthermore, our MoS₂ TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS₂ films for stretchable electronics.

Original language	English (US)
Article number	023505
Journal	Applied Physics Letters
Volume	103
Issue number	2
DOIs	https://doi.org/10.1063/1.4813311
State	Published - Jul 8 2013
Externally published	Yes

Bibliographical note

Funding Information:
T.T. was partially supported by a Waseda University Grant (2011A-501) and the Funding Program for the Next Generation of World-Leading Researchers. Y.I. was supported by Strategic International Collaborative Research Program (SICORP), Japan Science and Technology Agency, Grant-in-Aid for Scientific Research (S) (No. 21224009), for Specially Promoted Research (No. 25000003), and the “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)” from JSPS, Japan. L. J. Li acknowledges the support of the Academia Sinica and National Science Council in Taiwan (NSC-99-2112-M-001-021-MY3).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4813311

Cite this

@article{90af286e2ef94394b4164d14b90652bd,

title = "Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics",

abstract = "We fabricated stretchable molybdenum disulfide thin-film transistors (MoS2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm2/(V·s) and an on/off current ratio of 104 with a notably low threshold voltage (∼1 V). Furthermore, our MoS2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS2 films for stretchable electronics.",

author = "Jiang Pu and Yijin Zhang and Yoshifumi Wada and {Tse-Wei Wang}, Jacob and Li, {Lain Jong} and Yoshihiro Iwasa and Taishi Takenobu",

note = "Funding Information: T.T. was partially supported by a Waseda University Grant (2011A-501) and the Funding Program for the Next Generation of World-Leading Researchers. Y.I. was supported by Strategic International Collaborative Research Program (SICORP), Japan Science and Technology Agency, Grant-in-Aid for Scientific Research (S) (No. 21224009), for Specially Promoted Research (No. 25000003), and the “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)” from JSPS, Japan. L. J. Li acknowledges the support of the Academia Sinica and National Science Council in Taiwan (NSC-99-2112-M-001-021-MY3).",

year = "2013",

month = jul,

day = "8",

doi = "10.1063/1.4813311",

language = "English (US)",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "2",

}

TY - JOUR

T1 - Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics

AU - Pu, Jiang

AU - Zhang, Yijin

AU - Wada, Yoshifumi

AU - Tse-Wei Wang, Jacob

AU - Li, Lain Jong

AU - Iwasa, Yoshihiro

AU - Takenobu, Taishi

N1 - Funding Information: T.T. was partially supported by a Waseda University Grant (2011A-501) and the Funding Program for the Next Generation of World-Leading Researchers. Y.I. was supported by Strategic International Collaborative Research Program (SICORP), Japan Science and Technology Agency, Grant-in-Aid for Scientific Research (S) (No. 21224009), for Specially Promoted Research (No. 25000003), and the “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)” from JSPS, Japan. L. J. Li acknowledges the support of the Academia Sinica and National Science Council in Taiwan (NSC-99-2112-M-001-021-MY3).

PY - 2013/7/8

Y1 - 2013/7/8

N2 - We fabricated stretchable molybdenum disulfide thin-film transistors (MoS2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm2/(V·s) and an on/off current ratio of 104 with a notably low threshold voltage (∼1 V). Furthermore, our MoS2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS2 films for stretchable electronics.

AB - We fabricated stretchable molybdenum disulfide thin-film transistors (MoS2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm2/(V·s) and an on/off current ratio of 104 with a notably low threshold voltage (∼1 V). Furthermore, our MoS2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS2 films for stretchable electronics.

UR - http://www.scopus.com/inward/record.url?scp=84880496260&partnerID=8YFLogxK

U2 - 10.1063/1.4813311

DO - 10.1063/1.4813311

M3 - Article

AN - SCOPUS:84880496260

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023505

ER -