Abstract
We report a description of the design and fabrication process of semi-continuous profile Diffractive Optical Elements (DOEs) to be used as beam shapers. The process employs Electron Beam Lithography as a tool to obtain complex 3D profiles by direct writing onto PMMA resist. We also present a characterization of the resist for different types of developer and different developing times. This study shows how important is to fix such parameters for the assignment of the electron dosage values required to obtain the correct resist heights, through the Normalized Resist Thickness (NRT) vs. absorbed dosage curve. Simple patterns were fabricated and examined in order to check the accuracy of the dose calibration and the sensitivity to process errors. Preliminary optical tests on a DOE realized with a 16-level profile were also performed, and gave a good response.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 325-328 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 53 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jun 2000 |
| Externally published | Yes |
| Event | 25th International Conference on Micro- and Nano-Engineering - Rome, Italy Duration: Sep 21 1999 → Sep 23 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering