The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2.
|Original language||English (US)|
|Number of pages||7|
|Journal||Journal of Electronic Materials|
|State||Published - Aug 7 2014|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to thank the National Science Foundation for the Phase I STTR #0810391 and Phase IB #0937831 grants supplemented by the Texas Emerging Technology Fund seed grant (March 2008-Sept 2009). The research reported here was also supported by King Abdullah University of Science and Technology.
ASJC Scopus subject areas
- Materials Chemistry
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Condensed Matter Physics