Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer

E. M A Fuentes-Fernandez; A. M. Salomon-Preciado; Bruce E. Gnade; Manuel Angel Quevedo Quevedo-López; Pradeep Shah; Husam N. Alshareef

doi:10.1007/s11664-014-3308-x

Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer

E. M A Fuentes-Fernandez, A. M. Salomon-Preciado, Bruce E. Gnade, Manuel Angel Quevedo Quevedo-López, Pradeep Shah, Husam N. Alshareef

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2.

Original language	English (US)
Pages (from-to)	3898-3904
Number of pages	7
Journal	Journal of Electronic Materials
Volume	43
Issue number	11
DOIs	https://doi.org/10.1007/s11664-014-3308-x
State	Published - Aug 7 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to thank the National Science Foundation for the Phase I STTR #0810391 and Phase IB #0937831 grants supplemented by the Texas Emerging Technology Fund seed grant (March 2008-Sept 2009). The research reported here was also supported by King Abdullah University of Science and Technology.

ASJC Scopus subject areas

Materials Chemistry
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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10.1007/s11664-014-3308-x

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@article{97d588b1dcc24e9aa85c87cee09e92bc,

title = "Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer",

abstract = "The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2.",

author = "Fuentes-Fernandez, {E. M A} and Salomon-Preciado, {A. M.} and Gnade, {Bruce E.} and Quevedo-L{\'o}pez, {Manuel Angel Quevedo} and Pradeep Shah and Alshareef, {Husam N.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors would like to thank the National Science Foundation for the Phase I STTR #0810391 and Phase IB #0937831 grants supplemented by the Texas Emerging Technology Fund seed grant (March 2008-Sept 2009). The research reported here was also supported by King Abdullah University of Science and Technology.",

year = "2014",

month = aug,

day = "7",

doi = "10.1007/s11664-014-3308-x",

language = "English (US)",

volume = "43",

pages = "3898--3904",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer Verlag",

number = "11",

}

TY - JOUR

T1 - Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer

AU - Fuentes-Fernandez, E. M A

AU - Salomon-Preciado, A. M.

AU - Gnade, Bruce E.

AU - Quevedo-López, Manuel Angel Quevedo

AU - Shah, Pradeep

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors would like to thank the National Science Foundation for the Phase I STTR #0810391 and Phase IB #0937831 grants supplemented by the Texas Emerging Technology Fund seed grant (March 2008-Sept 2009). The research reported here was also supported by King Abdullah University of Science and Technology.

PY - 2014/8/7

Y1 - 2014/8/7

N2 - The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2.

AB - The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2.

UR - http://hdl.handle.net/10754/563694

UR - http://link.springer.com/10.1007/s11664-014-3308-x

UR - http://www.scopus.com/inward/record.url?scp=84907711514&partnerID=8YFLogxK

U2 - 10.1007/s11664-014-3308-x

DO - 10.1007/s11664-014-3308-x

M3 - Article

SN - 0361-5235

VL - 43

SP - 3898

EP - 3904

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 11

ER -

Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer

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