Fabrication of phase masks with sub-half micron resolution by electron beam lithography

E. Di Fabrizio; L. Grella; M. Gentili; M. Baciocchi; L. Mastrogiacomo; F. Vaninetti; F. Fontana

doi:10.1016/S0167-9317(98)00026-4

Fabrication of phase masks with sub-half micron resolution by electron beam lithography

E. Di Fabrizio^*, L. Grella, M. Gentili, M. Baciocchi, L. Mastrogiacomo, F. Vaninetti, F. Fontana

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This paper addresses the fabrication issues related to phase masks for photonics applications. A commercial e-beam lithography system operating at 50 kV is used to pattern a suitable resist on a fused silica substrate; the printed image is then transferred into the active material by means of Reactive Ion Etching in a fluorine-based chemistry. The optimised fabrication process, which will be described in detail, allows sub-500 nm resolution, centimetre long, phase masks with zero order suppression down to less than 3% and negligible field stitching. Some of the fabricated phase masks are used to create Bragg gratings into the core region of industry-grade optical fibres.

Original language	English (US)
Pages (from-to)	121-124
Number of pages	4
Journal	Microelectronic Engineering
Volume	41-42
DOIs	https://doi.org/10.1016/S0167-9317(98)00026-4
State	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(98)00026-4

Cite this

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title = "Fabrication of phase masks with sub-half micron resolution by electron beam lithography",

abstract = "This paper addresses the fabrication issues related to phase masks for photonics applications. A commercial e-beam lithography system operating at 50 kV is used to pattern a suitable resist on a fused silica substrate; the printed image is then transferred into the active material by means of Reactive Ion Etching in a fluorine-based chemistry. The optimised fabrication process, which will be described in detail, allows sub-500 nm resolution, centimetre long, phase masks with zero order suppression down to less than 3% and negligible field stitching. Some of the fabricated phase masks are used to create Bragg gratings into the core region of industry-grade optical fibres.",

author = "{Di Fabrizio}, E. and L. Grella and M. Gentili and M. Baciocchi and L. Mastrogiacomo and F. Vaninetti and F. Fontana",

year = "1998",

doi = "10.1016/S0167-9317(98)00026-4",

language = "English (US)",

volume = "41-42",

pages = "121--124",

journal = "Microelectronic Engineering",

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publisher = "Elsevier B.V.",

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T1 - Fabrication of phase masks with sub-half micron resolution by electron beam lithography

AU - Di Fabrizio, E.

AU - Grella, L.

AU - Gentili, M.

AU - Baciocchi, M.

AU - Mastrogiacomo, L.

AU - Vaninetti, F.

AU - Fontana, F.

PY - 1998

Y1 - 1998

N2 - This paper addresses the fabrication issues related to phase masks for photonics applications. A commercial e-beam lithography system operating at 50 kV is used to pattern a suitable resist on a fused silica substrate; the printed image is then transferred into the active material by means of Reactive Ion Etching in a fluorine-based chemistry. The optimised fabrication process, which will be described in detail, allows sub-500 nm resolution, centimetre long, phase masks with zero order suppression down to less than 3% and negligible field stitching. Some of the fabricated phase masks are used to create Bragg gratings into the core region of industry-grade optical fibres.

AB - This paper addresses the fabrication issues related to phase masks for photonics applications. A commercial e-beam lithography system operating at 50 kV is used to pattern a suitable resist on a fused silica substrate; the printed image is then transferred into the active material by means of Reactive Ion Etching in a fluorine-based chemistry. The optimised fabrication process, which will be described in detail, allows sub-500 nm resolution, centimetre long, phase masks with zero order suppression down to less than 3% and negligible field stitching. Some of the fabricated phase masks are used to create Bragg gratings into the core region of industry-grade optical fibres.

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U2 - 10.1016/S0167-9317(98)00026-4

DO - 10.1016/S0167-9317(98)00026-4

M3 - Article

AN - SCOPUS:12844284858

SN - 0167-9317

VL - 41-42

SP - 121

EP - 124

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Fabrication of phase masks with sub-half micron resolution by electron beam lithography

Abstract

ASJC Scopus subject areas

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