Fabrication of nonpolar a-plane nitride-based solar cell on r-plane sapphire substrate

Tatsuro Nakao; Takahiro Fujii; Toru Sugiyama; Shota Yamamoto; Daisuke Iida; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki; Hiroshi Amano

doi:10.1143/APEX.4.101001

Fabrication of nonpolar a-plane nitride-based solar cell on r-plane sapphire substrate

Tatsuro Nakao, Takahiro Fujii, Toru Sugiyama, Shota Yamamoto, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We fabricated and characterized a nonpolar a-plane nitride-based solar cell on an r-plane sapphire substrate. The maximum external quantum efficiency of the solar cell reached 62% at a wavelength of approximately 400 nm. The open-circuit voltage, the short-circuit current density, and the fill factor of the solar cell were 0.9 V, 4.8 mA/cm2, and 57%, respectively. A conversion efficiency of 1.6% was obtained from the solar cell under a solar simulator of air mass 1.5G and an irradiation intensity of 155mW/cm2 at room temperature. © 2011 The Japan Society of Applied Physics.

Original language	English (US)
Journal	APPLIED PHYSICS EXPRESS
Volume	4
Issue number	10
DOIs	https://doi.org/10.1143/APEX.4.101001
State	Published - Oct 1 2011
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

General Physics and Astronomy
General Engineering

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10.1143/APEX.4.101001

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title = "Fabrication of nonpolar a-plane nitride-based solar cell on r-plane sapphire substrate",

abstract = "We fabricated and characterized a nonpolar a-plane nitride-based solar cell on an r-plane sapphire substrate. The maximum external quantum efficiency of the solar cell reached 62% at a wavelength of approximately 400 nm. The open-circuit voltage, the short-circuit current density, and the fill factor of the solar cell were 0.9 V, 4.8 mA/cm2, and 57%, respectively. A conversion efficiency of 1.6% was obtained from the solar cell under a solar simulator of air mass 1.5G and an irradiation intensity of 155mW/cm2 at room temperature. {\textcopyright} 2011 The Japan Society of Applied Physics.",

author = "Tatsuro Nakao and Takahiro Fujii and Toru Sugiyama and Shota Yamamoto and Daisuke Iida and Motoaki Iwaya and Tetsuya Takeuchi and Satoshi Kamiyama and Isamu Akasaki and Hiroshi Amano",

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doi = "10.1143/APEX.4.101001",

language = "English (US)",

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T1 - Fabrication of nonpolar a-plane nitride-based solar cell on r-plane sapphire substrate

AU - Nakao, Tatsuro

AU - Fujii, Takahiro

AU - Sugiyama, Toru

AU - Yamamoto, Shota

AU - Iida, Daisuke

AU - Iwaya, Motoaki

AU - Takeuchi, Tetsuya

AU - Kamiyama, Satoshi

AU - Akasaki, Isamu

AU - Amano, Hiroshi

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2011/10/1

Y1 - 2011/10/1

N2 - We fabricated and characterized a nonpolar a-plane nitride-based solar cell on an r-plane sapphire substrate. The maximum external quantum efficiency of the solar cell reached 62% at a wavelength of approximately 400 nm. The open-circuit voltage, the short-circuit current density, and the fill factor of the solar cell were 0.9 V, 4.8 mA/cm2, and 57%, respectively. A conversion efficiency of 1.6% was obtained from the solar cell under a solar simulator of air mass 1.5G and an irradiation intensity of 155mW/cm2 at room temperature. © 2011 The Japan Society of Applied Physics.

AB - We fabricated and characterized a nonpolar a-plane nitride-based solar cell on an r-plane sapphire substrate. The maximum external quantum efficiency of the solar cell reached 62% at a wavelength of approximately 400 nm. The open-circuit voltage, the short-circuit current density, and the fill factor of the solar cell were 0.9 V, 4.8 mA/cm2, and 57%, respectively. A conversion efficiency of 1.6% was obtained from the solar cell under a solar simulator of air mass 1.5G and an irradiation intensity of 155mW/cm2 at room temperature. © 2011 The Japan Society of Applied Physics.

UR - https://iopscience.iop.org/article/10.1143/APEX.4.101001

UR - http://www.scopus.com/inward/record.url?scp=80054072737&partnerID=8YFLogxK

U2 - 10.1143/APEX.4.101001

DO - 10.1143/APEX.4.101001

M3 - Article

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VL - 4

JO - APPLIED PHYSICS EXPRESS

JF - APPLIED PHYSICS EXPRESS

IS - 10

ER -

Fabrication of nonpolar a-plane nitride-based solar cell on r-plane sapphire substrate

Abstract

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