Fabrication of multiple-wavelength lasers in InGaAs-InGaAsP structures using direct laser writing

In this letter, we report the use of a direct laser writing technique to induce different degrees of intermixing in selected areas across a wafer. Four lasers with distinguishable lasing wavelengths ranging from 1480 to 1512 nm have been obtained from specific regions of a single chip intermixed using a Q-switched Nd:YAG laser with a wavelength of 1.064 μm, generating pulses of ∼8 ns, and a pulse repetition rate of 10 Hz. This process offers a simple and potentially low-cost approach for integrating multiple-wavelength lasers for wavelength-division-multiplexing applications.