Fabrication of bandgap tuned lasers in GaAs/AlGaAs structure using sol-gel SiO2 induced quantum well intermixing

L. H. Lee*, O. Gunawan, B. S. Ooi, Y. Zhou, Y. C. Chan, Y. L. Lam

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


Quantum well intermixing (QWI) is a promising technology for the fabrication of photonic integrated circuits (PICs). In this paper, we report the development of a new QWI process using undoped and Er-doped SiO2 dielectric caps prepared using sol-gel technique. A differential bandgap shift of as large as 83 meV have been observed from samples intermixed with Er-doped and undoped SiO2 respectively. Broad area gain guided lasers have been fabricated from the as-grown and samples with bandgap tuned to different degrees using undoped and Er-doped SiO2. Lasers fabricated from the as-grown, undoped and Er-doped SiO2 samples showed lasing wavelengths of 865 nm, 850 nm and 835 nm respectively. Compared to the 865 nm, the threshold current of the 850 nm and 835 nm wavelength lasers were found to increase by 5% and 9.5% respectively. The slope efficiencies from these lasers were found to exhibit only small change compared to the as-grown lasers. These results imply that the quality of the material remains relatively high after intermixed using sol-gel SiO2 induced QWI technique.

Original languageEnglish (US)
Pages (from-to)162-167
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures - Singapore, Singapore
Duration: Dec 1 1999Dec 3 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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