TY - JOUR
T1 - Fabrication and optical characterization of GaN waveguides on (−201)-oriented β-Ga_2O_3
AU - Awan, Kashif M.
AU - Muhammad, Mufasila M.
AU - Sivan, Madhavi
AU - Bonca, Spencer
AU - Roqan, Iman S.
AU - Dolgaleva, Ksenia
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Canada Research Chairs; Natural Sciences and Engineering Research Council of Canada (NSERC) Discovery Program; NSERC Engage Program; CMC Microsystems (CMC).
PY - 2017/12/19
Y1 - 2017/12/19
N2 - Gallium nitride (GaN), a wide-bandgap III-V semiconductor material with a bandgap wavelength λ = 366 nm (for Wurtzite GaN) and transparency window covering the visible spectrum, has a large number of applications for photonics and optoelectronics. However, the optical quality of this material suffers from growth imperfections due to the lack of a suitable substrate. Recent studies have shown that GaN grown on (-201) β - GaO (gallium oxide) has better lattice matching and hence superior optical quality as compared to GaN grown traditionally on AlO (sapphire). In this work, we report on the fabrication of GaN waveguides on GaO substrate, followed by a wet-etch process aimed at the reduction of waveguide surface roughness and improvement of side-wall verticality in these waveguides. The propagation loss in the resulting waveguides has been experimentally determined to be 7.5 dB/cm.
AB - Gallium nitride (GaN), a wide-bandgap III-V semiconductor material with a bandgap wavelength λ = 366 nm (for Wurtzite GaN) and transparency window covering the visible spectrum, has a large number of applications for photonics and optoelectronics. However, the optical quality of this material suffers from growth imperfections due to the lack of a suitable substrate. Recent studies have shown that GaN grown on (-201) β - GaO (gallium oxide) has better lattice matching and hence superior optical quality as compared to GaN grown traditionally on AlO (sapphire). In this work, we report on the fabrication of GaN waveguides on GaO substrate, followed by a wet-etch process aimed at the reduction of waveguide surface roughness and improvement of side-wall verticality in these waveguides. The propagation loss in the resulting waveguides has been experimentally determined to be 7.5 dB/cm.
UR - http://hdl.handle.net/10754/626753
UR - https://www.osapublishing.org/ome/abstract.cfm?uri=ome-8-1-88
UR - http://www.scopus.com/inward/record.url?scp=85039556471&partnerID=8YFLogxK
U2 - 10.1364/OME.8.000088
DO - 10.1364/OME.8.000088
M3 - Article
AN - SCOPUS:85039556471
VL - 8
SP - 88
JO - Optical Materials Express
JF - Optical Materials Express
SN - 2159-3930
IS - 1
ER -