Fabrication and characterization of ZnSe-based blue/green laser diodes

Ayumu Tsujimura; Shigeo Yoshii; Shigeo Hayashi; Kazuhiro Ohkawa; Tsuneo Mitsuyu

doi:10.1117/12.162806

Fabrication and characterization of ZnSe-based blue/green laser diodes

Ayumu Tsujimura, Shigeo Yoshii, Shigeo Hayashi, Kazuhiro Ohkawa, Tsuneo Mitsuyu

Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

P- and n-type doping of ZnSe is the key technology to fabricate blue/green laser diodes. ZnCdSe/ZnSe quantum-well stripe-geometry laser diodes have been grown by molecular-beam epitaxy with nitrogen radical doping and chlorine doping techniques. Lasing was obtained in the pulsed operation at room temperature by applying high-reflectivity facet coating and in the continuous wave operation at 77 K. The characteristic temperature was obtained to be 137 K below room temperature. The cavity parameters were investigated at 77 K for a single-quantum-well separate-confinement-heterostructure. An internal loss of 1.2 cm^-1, an internal quantum efficiency of 61%, a transparency current density of 10 kA/(cm²μm) and a gain factor of 0.095 cmμm/A were obtained. The optical gain will be improved by lowering the dislocation density in the laser structure.

Original language	English (US)
Pages	468-475
Number of pages	8
DOIs	https://doi.org/10.1117/12.162806
State	Published - 1993
Event	Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy Duration: May 23 1993 → May 28 1993

Conference

Conference	Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993
Country/Territory	Italy
City	Trieste
Period	05/23/93 → 05/28/93

Bibliographical note

Funding Information:
We wish to acknowledge Hidemi Takeishi of Kagoshima Matsushita Electronics Co., Ltd. for his valuable contribution.

Publisher Copyright:
© 1993 SPIE. All rights reserved.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.162806

Cite this

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title = "Fabrication and characterization of ZnSe-based blue/green laser diodes",

abstract = "P- and n-type doping of ZnSe is the key technology to fabricate blue/green laser diodes. ZnCdSe/ZnSe quantum-well stripe-geometry laser diodes have been grown by molecular-beam epitaxy with nitrogen radical doping and chlorine doping techniques. Lasing was obtained in the pulsed operation at room temperature by applying high-reflectivity facet coating and in the continuous wave operation at 77 K. The characteristic temperature was obtained to be 137 K below room temperature. The cavity parameters were investigated at 77 K for a single-quantum-well separate-confinement-heterostructure. An internal loss of 1.2 cm-1, an internal quantum efficiency of 61%, a transparency current density of 10 kA/(cm2μm) and a gain factor of 0.095 cmμm/A were obtained. The optical gain will be improved by lowering the dislocation density in the laser structure.",

author = "Ayumu Tsujimura and Shigeo Yoshii and Shigeo Hayashi and Kazuhiro Ohkawa and Tsuneo Mitsuyu",

note = "Funding Information: We wish to acknowledge Hidemi Takeishi of Kagoshima Matsushita Electronics Co., Ltd. for his valuable contribution. Publisher Copyright: {\textcopyright} 1993 SPIE. All rights reserved.; Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 ; Conference date: 23-05-1993 Through 28-05-1993",

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AU - Tsujimura, Ayumu

AU - Yoshii, Shigeo

AU - Hayashi, Shigeo

AU - Ohkawa, Kazuhiro

AU - Mitsuyu, Tsuneo

PY - 1993

Y1 - 1993

N2 - P- and n-type doping of ZnSe is the key technology to fabricate blue/green laser diodes. ZnCdSe/ZnSe quantum-well stripe-geometry laser diodes have been grown by molecular-beam epitaxy with nitrogen radical doping and chlorine doping techniques. Lasing was obtained in the pulsed operation at room temperature by applying high-reflectivity facet coating and in the continuous wave operation at 77 K. The characteristic temperature was obtained to be 137 K below room temperature. The cavity parameters were investigated at 77 K for a single-quantum-well separate-confinement-heterostructure. An internal loss of 1.2 cm-1, an internal quantum efficiency of 61%, a transparency current density of 10 kA/(cm2μm) and a gain factor of 0.095 cmμm/A were obtained. The optical gain will be improved by lowering the dislocation density in the laser structure.

AB - P- and n-type doping of ZnSe is the key technology to fabricate blue/green laser diodes. ZnCdSe/ZnSe quantum-well stripe-geometry laser diodes have been grown by molecular-beam epitaxy with nitrogen radical doping and chlorine doping techniques. Lasing was obtained in the pulsed operation at room temperature by applying high-reflectivity facet coating and in the continuous wave operation at 77 K. The characteristic temperature was obtained to be 137 K below room temperature. The cavity parameters were investigated at 77 K for a single-quantum-well separate-confinement-heterostructure. An internal loss of 1.2 cm-1, an internal quantum efficiency of 61%, a transparency current density of 10 kA/(cm2μm) and a gain factor of 0.095 cmμm/A were obtained. The optical gain will be improved by lowering the dislocation density in the laser structure.

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Fabrication and characterization of ZnSe-based blue/green laser diodes

Abstract

Conference

Bibliographical note

ASJC Scopus subject areas

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