Fabrication and characterization of ZnSe-based blue/green laser diodes

Ayumu Tsujimura, Shigeo Yoshii, Shigeo Hayashi, Kazuhiro Ohkawa, Tsuneo Mitsuyu

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations


P- and n-type doping of ZnSe is the key technology to fabricate blue/green laser diodes. ZnCdSe/ZnSe quantum-well stripe-geometry laser diodes have been grown by molecular-beam epitaxy with nitrogen radical doping and chlorine doping techniques. Lasing was obtained in the pulsed operation at room temperature by applying high-reflectivity facet coating and in the continuous wave operation at 77 K. The characteristic temperature was obtained to be 137 K below room temperature. The cavity parameters were investigated at 77 K for a single-quantum-well separate-confinement-heterostructure. An internal loss of 1.2 cm-1, an internal quantum efficiency of 61%, a transparency current density of 10 kA/(cm2μm) and a gain factor of 0.095 cmμm/A were obtained. The optical gain will be improved by lowering the dislocation density in the laser structure.

Original languageEnglish (US)
Number of pages8
StatePublished - 1993
EventPhysical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy
Duration: May 23 1993May 28 1993


ConferencePhysical Concepts and Materials for Novel Optoelectronic Device Applications II 1993

Bibliographical note

Funding Information:
We wish to acknowledge Hidemi Takeishi of Kagoshima Matsushita Electronics Co., Ltd. for his valuable contribution.

Publisher Copyright:
© 1993 SPIE. All rights reserved.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Fabrication and characterization of ZnSe-based blue/green laser diodes'. Together they form a unique fingerprint.

Cite this