Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks

E. M A Fuentes-Fernandez; W. Debray-Mechtaly; Manuel Angel Quevedo Quevedo-López; Bruce E. Gnade; Arvindh Rajasekaran; Abhiman Hande; Pradeep Shah; Husam N. Alshareef

doi:10.1007/s11664-010-1407-x

Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks

E. M A Fuentes-Fernandez, W. Debray-Mechtaly, Manuel Angel Quevedo Quevedo-López, Bruce E. Gnade, Arvindh Rajasekaran, Abhiman Hande, Pradeep Shah, Husam N. Alshareef

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3 Scopus citations

Abstract

0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. © 2010 TMS.

Original language	English (US)
Pages (from-to)	85-91
Number of pages	7
Journal	Journal of Electronic Materials
Volume	40
Issue number	1
DOIs	https://doi.org/10.1007/s11664-010-1407-x
State	Published - Nov 18 2010

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to thank NSF phase I STTR (Grant No. 810391 and 0937831) and the Texas Emerging Technology Fund for their financial support.

ASJC Scopus subject areas

Materials Chemistry
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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@article{f7db34afd63142ceb3dc882ef13ce865,

title = "Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks",

abstract = "0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. {\textcopyright} 2010 TMS.",

author = "Fuentes-Fernandez, {E. M A} and W. Debray-Mechtaly and Quevedo-L{\'o}pez, {Manuel Angel Quevedo} and Gnade, {Bruce E.} and Arvindh Rajasekaran and Abhiman Hande and Pradeep Shah and Alshareef, {Husam N.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors would like to thank NSF phase I STTR (Grant No. 810391 and 0937831) and the Texas Emerging Technology Fund for their financial support.",

year = "2010",

month = nov,

day = "18",

doi = "10.1007/s11664-010-1407-x",

language = "English (US)",

volume = "40",

pages = "85--91",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

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T1 - Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks

AU - Fuentes-Fernandez, E. M A

AU - Debray-Mechtaly, W.

AU - Quevedo-López, Manuel Angel Quevedo

AU - Gnade, Bruce E.

AU - Rajasekaran, Arvindh

AU - Hande, Abhiman

AU - Shah, Pradeep

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors would like to thank NSF phase I STTR (Grant No. 810391 and 0937831) and the Texas Emerging Technology Fund for their financial support.

PY - 2010/11/18

Y1 - 2010/11/18

N2 - 0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. © 2010 TMS.

AB - 0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. © 2010 TMS.

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U2 - 10.1007/s11664-010-1407-x

DO - 10.1007/s11664-010-1407-x

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 1

ER -

Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks

Abstract

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