Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors

Israel I. Mejia; Ana L. Salas Villaseñor; Dong Kyu Cha; Husam N. Alshareef; Bruce E. Gnade; Manuel Angel Quevedo Quevedo-López

doi:10.1109/TED.2012.2228200

Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors

Israel I. Mejia, Ana L. Salas Villaseñor, Dong Kyu Cha, Husam N. Alshareef, Bruce E. Gnade, Manuel Angel Quevedo Quevedo-López

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.

Original language	English (US)
Pages (from-to)	327-332
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	1
DOIs	https://doi.org/10.1109/TED.2012.2228200
State	Published - Jan 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported in part by the CONACyT, by the Air Force Office of Sponsored Research, and by the Army Research Laboratory. The review of this paper was arranged by Editor H.-S. Tae.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors",

abstract = "We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2{\.V}s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. {\textcopyright} 1963-2012 IEEE.",

author = "Mejia, {Israel I.} and {Salas Villase{\~n}or}, {Ana L.} and Cha, {Dong Kyu} and Alshareef, {Husam N.} and Gnade, {Bruce E.} and Quevedo-L{\'o}pez, {Manuel Angel Quevedo}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported in part by the CONACyT, by the Air Force Office of Sponsored Research, and by the Army Research Laboratory. The review of this paper was arranged by Editor H.-S. Tae.",

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doi = "10.1109/TED.2012.2228200",

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AU - Mejia, Israel I.

AU - Salas Villaseñor, Ana L.

AU - Cha, Dong Kyu

AU - Alshareef, Husam N.

AU - Gnade, Bruce E.

AU - Quevedo-López, Manuel Angel Quevedo

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported in part by the CONACyT, by the Air Force Office of Sponsored Research, and by the Army Research Laboratory. The review of this paper was arranged by Editor H.-S. Tae.

PY - 2013/1

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N2 - We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.

AB - We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.

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DO - 10.1109/TED.2012.2228200

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors

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