Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED

Motoaki Iwaya; Daisuke Iida; Kunihiro Takeda; Toru Sugiyama; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki

doi:10.1109/CLEOPR.2015.7376314

Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED

Motoaki Iwaya, Daisuke Iida, Kunihiro Takeda, Toru Sugiyama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We discovered that Si-doped AlGaN with low AlN molar fraction have been used to realize an external low-resistivity n-layer at room temperature. This Si-doped n-Al0.05Ga0.95N underlying layer is extremely useful for the realization of high-performance nitride-based light emitting diodes. We also confirmed a reduction in the differential resistance of a violet light-emitting diode by using this n-AlGaN.

Original language	English (US)
Title of host publication	2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781467371094
DOIs	https://doi.org/10.1109/CLEOPR.2015.7376314
State	Published - Jan 7 2016
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-21

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10.1109/CLEOPR.2015.7376314

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Iwaya, M., Iida, D., Takeda, K., Sugiyama, T., Takeuchi, T., Kamiyama, S., & Akasaki, I. (2016). Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED. In 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2015.7376314

@inproceedings{9399c60de7074c3c94b7c01851101970,

title = "Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED",

abstract = "We discovered that Si-doped AlGaN with low AlN molar fraction have been used to realize an external low-resistivity n-layer at room temperature. This Si-doped n-Al0.05Ga0.95N underlying layer is extremely useful for the realization of high-performance nitride-based light emitting diodes. We also confirmed a reduction in the differential resistance of a violet light-emitting diode by using this n-AlGaN.",

author = "Motoaki Iwaya and Daisuke Iida and Kunihiro Takeda and Toru Sugiyama and Tetsuya Takeuchi and Satoshi Kamiyama and Isamu Akasaki",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-21",

year = "2016",

month = jan,

day = "7",

doi = "10.1109/CLEOPR.2015.7376314",

language = "English (US)",

isbn = "9781467371094",

booktitle = "2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

}

Iwaya, M, Iida, D, Takeda, K, Sugiyama, T, Takeuchi, T, Kamiyama, S & Akasaki, I 2016, Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED. in 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/CLEOPR.2015.7376314

Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED. / Iwaya, Motoaki; Iida, Daisuke; Takeda, Kunihiro et al.
2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Institute of Electrical and Electronics Engineers Inc., 2016.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED

AU - Iwaya, Motoaki

AU - Iida, Daisuke

AU - Takeda, Kunihiro

AU - Sugiyama, Toru

AU - Takeuchi, Tetsuya

AU - Kamiyama, Satoshi

AU - Akasaki, Isamu

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2016/1/7

Y1 - 2016/1/7

N2 - We discovered that Si-doped AlGaN with low AlN molar fraction have been used to realize an external low-resistivity n-layer at room temperature. This Si-doped n-Al0.05Ga0.95N underlying layer is extremely useful for the realization of high-performance nitride-based light emitting diodes. We also confirmed a reduction in the differential resistance of a violet light-emitting diode by using this n-AlGaN.

AB - We discovered that Si-doped AlGaN with low AlN molar fraction have been used to realize an external low-resistivity n-layer at room temperature. This Si-doped n-Al0.05Ga0.95N underlying layer is extremely useful for the realization of high-performance nitride-based light emitting diodes. We also confirmed a reduction in the differential resistance of a violet light-emitting diode by using this n-AlGaN.

UR - http://ieeexplore.ieee.org/document/7376314/

UR - http://www.scopus.com/inward/record.url?scp=84963995319&partnerID=8YFLogxK

U2 - 10.1109/CLEOPR.2015.7376314

DO - 10.1109/CLEOPR.2015.7376314

M3 - Conference contribution

SN - 9781467371094

BT - 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Iwaya M, Iida D, Takeda K, Sugiyama T, Takeuchi T, Kamiyama S et al. Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED. In 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Institute of Electrical and Electronics Engineers Inc. 2016 doi: 10.1109/CLEOPR.2015.7376314

Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED

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