Abstract
Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 4855-4866 |
| Number of pages | 12 |
| Journal | Chem. Soc. Rev. |
| Volume | 46 |
| Issue number | 16 |
| DOIs | |
| State | Published - 2017 |
| Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: The authors gratefully acknowledge the support from GlobalFoundries and Cornell Nanoscale Science and Technology (CNF), the Cornell Center for Materials Research (CCMR) and the KAUST-Cornell Center of Energy and Sustainability (KAUST-CU). Dr L. Li and Dr X. Liu contributed equally to this work.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.