Extreme ultraviolet resist materials for sub-7 nm patterning

Li Li, Xuan Liu, Shyam Pal, Shulan Wang, Christopher K. Ober, Emmanuel P. Giannelis

Research output: Contribution to journalArticlepeer-review

201 Scopus citations

Abstract

Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.
Original languageEnglish (US)
Pages (from-to)4855-4866
Number of pages12
JournalChem. Soc. Rev.
Volume46
Issue number16
DOIs
StatePublished - 2017
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors gratefully acknowledge the support from GlobalFoundries and Cornell Nanoscale Science and Technology (CNF), the Cornell Center for Materials Research (CCMR) and the KAUST-Cornell Center of Energy and Sustainability (KAUST-CU). Dr L. Li and Dr X. Liu contributed equally to this work.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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