Extreme temperature 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

Wei Cheng Lien; Albert P. Pisano; Dung Sheng Tsai; Jr Hau He; Debbie G. Senesky

doi:10.1109/ESSDERC.2012.6343376

Extreme temperature 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

Wei Cheng Lien^*, Albert P. Pisano, Dung Sheng Tsai, Jr Hau He, Debbie G. Senesky

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This work demonstrates high-temperature operation of metal-semiconductor- metal photodetectors (MSM PDs) using lightly Al-doped epitaxial 4H-SiC thin films. The responsivity of the PDs under 325 nm illumination is 0.116 A/W at a 20 V bias at room temperature. The photo-to-dark current ratio of SiC MSM PDs is as high as 1.3×10⁵ at 25°C and is 22 at 400°C. The rise time of PDs is increased slightly from 594 μs to 684 μs from room temperature to 400°C. These results support the use of 4H-SiC thin films photodetectors in extreme high-temperature applications.

Original language	English (US)
Title of host publication	2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
Pages	234-237
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2012.6343376
State	Published - 2012
Externally published	Yes
Event	42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France Duration: Sep 17 2012 → Sep 21 2012

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	42nd European Solid-State Device Research Conference, ESSDERC 2012
Country/Territory	France
City	Bordeaux
Period	09/17/12 → 09/21/12

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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10.1109/ESSDERC.2012.6343376

Cite this

Lien, W. C., Pisano, A. P., Tsai, D. S., He, J. H., & Senesky, D. G. (2012). Extreme temperature 4H-SiC metal-semiconductor-metal ultraviolet photodetectors. In 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012 (pp. 234-237). Article 6343376 (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2012.6343376

@inproceedings{86b9eaa9b3c64998a37c5bdc3b949f31,

title = "Extreme temperature 4H-SiC metal-semiconductor-metal ultraviolet photodetectors",

abstract = "This work demonstrates high-temperature operation of metal-semiconductor- metal photodetectors (MSM PDs) using lightly Al-doped epitaxial 4H-SiC thin films. The responsivity of the PDs under 325 nm illumination is 0.116 A/W at a 20 V bias at room temperature. The photo-to-dark current ratio of SiC MSM PDs is as high as 1.3×105 at 25°C and is 22 at 400°C. The rise time of PDs is increased slightly from 594 μs to 684 μs from room temperature to 400°C. These results support the use of 4H-SiC thin films photodetectors in extreme high-temperature applications.",

author = "Lien, {Wei Cheng} and Pisano, {Albert P.} and Tsai, {Dung Sheng} and He, {Jr Hau} and Senesky, {Debbie G.}",

year = "2012",

doi = "10.1109/ESSDERC.2012.6343376",

language = "English (US)",

isbn = "9781467317078",

series = "European Solid-State Device Research Conference",

pages = "234--237",

booktitle = "2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012",

note = "42nd European Solid-State Device Research Conference, ESSDERC 2012 ; Conference date: 17-09-2012 Through 21-09-2012",

}

Lien, WC, Pisano, AP, Tsai, DS, He, JH & Senesky, DG 2012, Extreme temperature 4H-SiC metal-semiconductor-metal ultraviolet photodetectors. in 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012., 6343376, European Solid-State Device Research Conference, pp. 234-237, 42nd European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, 09/17/12. https://doi.org/10.1109/ESSDERC.2012.6343376

Extreme temperature 4H-SiC metal-semiconductor-metal ultraviolet photodetectors. / Lien, Wei Cheng; Pisano, Albert P.; Tsai, Dung Sheng et al.
2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012. 2012. p. 234-237 6343376 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Extreme temperature 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

AU - Lien, Wei Cheng

AU - Pisano, Albert P.

AU - Tsai, Dung Sheng

AU - He, Jr Hau

AU - Senesky, Debbie G.

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N2 - This work demonstrates high-temperature operation of metal-semiconductor- metal photodetectors (MSM PDs) using lightly Al-doped epitaxial 4H-SiC thin films. The responsivity of the PDs under 325 nm illumination is 0.116 A/W at a 20 V bias at room temperature. The photo-to-dark current ratio of SiC MSM PDs is as high as 1.3×105 at 25°C and is 22 at 400°C. The rise time of PDs is increased slightly from 594 μs to 684 μs from room temperature to 400°C. These results support the use of 4H-SiC thin films photodetectors in extreme high-temperature applications.

AB - This work demonstrates high-temperature operation of metal-semiconductor- metal photodetectors (MSM PDs) using lightly Al-doped epitaxial 4H-SiC thin films. The responsivity of the PDs under 325 nm illumination is 0.116 A/W at a 20 V bias at room temperature. The photo-to-dark current ratio of SiC MSM PDs is as high as 1.3×105 at 25°C and is 22 at 400°C. The rise time of PDs is increased slightly from 594 μs to 684 μs from room temperature to 400°C. These results support the use of 4H-SiC thin films photodetectors in extreme high-temperature applications.

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SN - 9781467317078

T3 - European Solid-State Device Research Conference

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BT - 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012

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Y2 - 17 September 2012 through 21 September 2012

ER -

Extreme temperature 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

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