Extending quantum efficiency roll-over threshold with compositionally graded InGaN/GaN LED

Pawan Mishra, Tien Khee Ng, Bilal Janjua, Chao Shen, Jessica Eid, Ahmed Y. Alyamani, Munir M. El-Desouki, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


We report a significant improvement in the electrical characteristic of compositionally graded InGaN/GaN multiple-quantum-well (MQWs) micro-LED. The efficiency droop in this device occurred at ∼20 times higher injection levels (∼275 A/cm2) compared to a conventional step-MQWs microLED (∼14 A/cm2).
Original languageEnglish (US)
Title of host publication2014 IEEE Photonics Conference
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages2
ISBN (Print)9781457715044
StatePublished - Dec 2014

Cite this