We study the resistive switching triggered by an applied electrical bias in the antiferromagnetic Mott insulator Sr3Ir2O7. The switching was previously associated with an electric-field-driven structural transition. Here we use time-resolved measurements to probe the thermal activation behavior of the switching process and acquire information about the energy barrier associated with the transition. We quantify the changes in the energy-barrier height with respect to the applied bias and find a linear decrease of the barrier with increasing bias. Our observations support the potential of antiferromagnetic transition-metal oxides for spintronic applications.
|Original language||English (US)|
|Journal||Physical Review B|
|State||Published - Apr 27 2018|
Bibliographical noteKAUST Repository Item: Exported on 2021-04-06
Acknowledged KAUST grant number(s): OSR-2015-CRG4-2626
Acknowledgements: This work was supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA, by NSF Grants No. DMR-1712101 and No. DMR-1122603, and by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2015-CRG4-2626.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.