We report on metal oxide superiattice systems grown from solution and their use in high electron mobility transistors. On the basis of temperature-dependent electron transport measurements and carrier distribution evaluation, we argue that the enhanced performance arises from the presence of 2-dimensional electron gas-like systems formed at the oxide-oxide heterointerfaces.
|Original language||English (US)|
|Title of host publication||22nd International Display Workshops, IDW 2015|
|Publisher||International Display Workshopsidw@idw.ne.jp|
|Number of pages||4|
|State||Published - Jan 1 2015|