Abstract
We report on metal oxide superiattice systems grown from solution and their use in high electron mobility transistors. On the basis of temperature-dependent electron transport measurements and carrier distribution evaluation, we argue that the enhanced performance arises from the presence of 2-dimensional electron gas-like systems formed at the oxide-oxide heterointerfaces.
Original language | English (US) |
---|---|
Title of host publication | 22nd International Display Workshops, IDW 2015 |
Publisher | International Display Workshopsidw@idw.ne.jp |
Pages | 301-304 |
Number of pages | 4 |
ISBN (Print) | 9781510845503 |
State | Published - Jan 1 2015 |