Experimental and theoretical study of the cracking behavior of sol-gel-derived SiO2 film on InP substrate

J. Liu; Y. L. Lam; Y. C. Chan; Y. Zhou; B. S. Ooi; Z. S. Yun

doi:10.1007/s003390050057

Experimental and theoretical study of the cracking behavior of sol-gel-derived SiO₂ film on InP substrate

J. Liu^*, Y. L. Lam, Y. C. Chan, Y. Zhou, B. S. Ooi, Z. S. Yun

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this paper, we study and characterize the cracking behavior of a sol-gel-derived amorphous silica film on a InP substrate. The sol-gel silica films are deposited by spin-coating and rapid thermal processing (RTP). It is observed that the volatility of the III-V semiconductor results in the cracking of the films when the annealing temperature is higher than 450°C, and that the crack patterns are all parallel or perpendicular to 〈100〉. The experimental results on the crack patterns in the sol-gel silical films are then theoretically analyzed. In addition, the critical thicknesses of the sol-gel films on InP are compared with those deposited on Si.

Original language	English (US)
Pages (from-to)	341-343
Number of pages	3
Journal	Applied Physics A: Materials Science and Processing
Volume	70
Issue number	3
DOIs	https://doi.org/10.1007/s003390050057
State	Published - Mar 2000
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Materials Science

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title = "Experimental and theoretical study of the cracking behavior of sol-gel-derived SiO2 film on InP substrate",

abstract = "In this paper, we study and characterize the cracking behavior of a sol-gel-derived amorphous silica film on a InP substrate. The sol-gel silica films are deposited by spin-coating and rapid thermal processing (RTP). It is observed that the volatility of the III-V semiconductor results in the cracking of the films when the annealing temperature is higher than 450°C, and that the crack patterns are all parallel or perpendicular to 〈100〉. The experimental results on the crack patterns in the sol-gel silical films are then theoretically analyzed. In addition, the critical thicknesses of the sol-gel films on InP are compared with those deposited on Si.",

author = "J. Liu and Lam, {Y. L.} and Chan, {Y. C.} and Y. Zhou and Ooi, {B. S.} and Yun, {Z. S.}",

year = "2000",

month = mar,

doi = "10.1007/s003390050057",

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TY - JOUR

T1 - Experimental and theoretical study of the cracking behavior of sol-gel-derived SiO2 film on InP substrate

AU - Liu, J.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Zhou, Y.

AU - Ooi, B. S.

AU - Yun, Z. S.

PY - 2000/3

Y1 - 2000/3

N2 - In this paper, we study and characterize the cracking behavior of a sol-gel-derived amorphous silica film on a InP substrate. The sol-gel silica films are deposited by spin-coating and rapid thermal processing (RTP). It is observed that the volatility of the III-V semiconductor results in the cracking of the films when the annealing temperature is higher than 450°C, and that the crack patterns are all parallel or perpendicular to 〈100〉. The experimental results on the crack patterns in the sol-gel silical films are then theoretically analyzed. In addition, the critical thicknesses of the sol-gel films on InP are compared with those deposited on Si.

AB - In this paper, we study and characterize the cracking behavior of a sol-gel-derived amorphous silica film on a InP substrate. The sol-gel silica films are deposited by spin-coating and rapid thermal processing (RTP). It is observed that the volatility of the III-V semiconductor results in the cracking of the films when the annealing temperature is higher than 450°C, and that the crack patterns are all parallel or perpendicular to 〈100〉. The experimental results on the crack patterns in the sol-gel silical films are then theoretically analyzed. In addition, the critical thicknesses of the sol-gel films on InP are compared with those deposited on Si.

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U2 - 10.1007/s003390050057

DO - 10.1007/s003390050057

M3 - Article

AN - SCOPUS:0034156392

SN - 0947-8396

VL - 70

SP - 341

EP - 343

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 3

ER -

Experimental and theoretical study of the cracking behavior of sol-gel-derived SiO₂ film on InP substrate

Abstract

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