Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device

Umesh Chand; Den Berco; Ren Li; Meshal Alawein; Hossein Fariborzi

doi:10.1109/EDTM.2018.8421452

Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device

Umesh Chand, Den Berco, Ren Li, Meshal Alawein, Hossein Fariborzi

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO₂) based device. The Cu/Poly-Si/TiN CBRAM device exhibits excellent memory performance, such as high ON/OFF resistance ratio, high endurance and good retention time (10⁴ s). In addition to the experimental study, this work presents a numerical model for the Cu/Poly-Si/TiN CBRAM device. The simulation results based on this model perfectly match the experimental measurements.

Original language	English (US)
Title of host publication	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	217-219
Number of pages	3
ISBN (Print)	9781538637111
DOIs	https://doi.org/10.1109/EDTM.2018.8421452
State	Published - Jul 26 2018
Event	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan Duration: Mar 13 2018 → Mar 16 2018

Publication series

Name	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Conference

Conference	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country/Territory	Japan
City	Kobe
Period	03/13/18 → 03/16/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

CBRAM
Poly-Si
reliability
resistive switching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Industrial and Manufacturing Engineering

Access to Document

10.1109/EDTM.2018.8421452

Cite this

Chand, U., Berco, D., Li, R., Alawein, M., & Fariborzi, H. (2018). Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 217-219). Article 8421452 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421452

Chand, Umesh ; Berco, Den ; Li, Ren et al. / Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 217-219 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

@inproceedings{aa85734d2bc8495794bb8aa84a2328bb,

title = "Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device",

abstract = "In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO2) based device. The Cu/Poly-Si/TiN CBRAM device exhibits excellent memory performance, such as high ON/OFF resistance ratio, high endurance and good retention time (104 s). In addition to the experimental study, this work presents a numerical model for the Cu/Poly-Si/TiN CBRAM device. The simulation results based on this model perfectly match the experimental measurements.",

keywords = "CBRAM, Poly-Si, reliability, resistive switching",

author = "Umesh Chand and Den Berco and Ren Li and Meshal Alawein and Hossein Fariborzi",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

year = "2018",

month = jul,

day = "26",

doi = "10.1109/EDTM.2018.8421452",

language = "English (US)",

isbn = "9781538637111",

series = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "217--219",

booktitle = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

address = "United States",

}

Chand, U, Berco, D, Li, R, Alawein, M & Fariborzi, H 2018, Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421452, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 217-219, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 03/13/18. https://doi.org/10.1109/EDTM.2018.8421452

Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device. / Chand, Umesh; Berco, Den; Li, Ren et al.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 217-219 8421452 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device

AU - Chand, Umesh

AU - Berco, Den

AU - Li, Ren

AU - Alawein, Meshal

AU - Fariborzi, Hossein

PY - 2018/7/26

Y1 - 2018/7/26

N2 - In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO2) based device. The Cu/Poly-Si/TiN CBRAM device exhibits excellent memory performance, such as high ON/OFF resistance ratio, high endurance and good retention time (104 s). In addition to the experimental study, this work presents a numerical model for the Cu/Poly-Si/TiN CBRAM device. The simulation results based on this model perfectly match the experimental measurements.

AB - In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO2) based device. The Cu/Poly-Si/TiN CBRAM device exhibits excellent memory performance, such as high ON/OFF resistance ratio, high endurance and good retention time (104 s). In addition to the experimental study, this work presents a numerical model for the Cu/Poly-Si/TiN CBRAM device. The simulation results based on this model perfectly match the experimental measurements.

KW - CBRAM

KW - Poly-Si

KW - reliability

KW - resistive switching

UR - http://www.scopus.com/inward/record.url?scp=85051535340&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2018.8421452

DO - 10.1109/EDTM.2018.8421452

M3 - Conference contribution

AN - SCOPUS:85051535340

SN - 9781538637111

T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

SP - 217

EP - 219

BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

Y2 - 13 March 2018 through 16 March 2018

ER -

Chand U, Berco D, Li R, Alawein M, Fariborzi H. Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 217-219. 8421452. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421452

Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device

Abstract

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Bibliographical note

Keywords

ASJC Scopus subject areas

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