Excitonic localization in AlN-rich AlxGa1−xN/AlyGa1−yN multi-quantum-well grain boundaries

Idris A. Ajia; P. R. Edwards; Z. Liu; J. C. Yan; R. W. Martin; Iman S. Roqan

doi:10.1063/1.4896681

Excitonic localization in AlN-rich AlxGa1−xN/AlyGa1−yN multi-quantum-well grain boundaries

Idris A. Ajia, P. R. Edwards, Z. Liu, J. C. Yan, R. W. Martin, Iman S. Roqan

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Abstract

AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.

Original language	English (US)
Pages (from-to)	122111
Journal	Applied Physics Letters
Volume	105
Issue number	12
DOIs	https://doi.org/10.1063/1.4896681
State	Published - Sep 22 2014

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title = "Excitonic localization in AlN-rich AlxGa1−xN/AlyGa1−yN multi-quantum-well grain boundaries",

abstract = "AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.",

author = "Ajia, {Idris A.} and Edwards, {P. R.} and Z. Liu and Yan, {J. C.} and Martin, {R. W.} and Roqan, {Iman S.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

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month = sep,

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doi = "10.1063/1.4896681",

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T1 - Excitonic localization in AlN-rich AlxGa1−xN/AlyGa1−yN multi-quantum-well grain boundaries

AU - Ajia, Idris A.

AU - Edwards, P. R.

AU - Liu, Z.

AU - Yan, J. C.

AU - Martin, R. W.

AU - Roqan, Iman S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2014/9/22

Y1 - 2014/9/22

N2 - AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.

AB - AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.

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UR - http://scitation.aip.org/content/aip/journal/apl/105/12/10.1063/1.4896681

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U2 - 10.1063/1.4896681

DO - 10.1063/1.4896681

M3 - Article

SN - 0003-6951

VL - 105

SP - 122111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Excitonic localization in AlN-rich AlxGa1−xN/AlyGa1−yN multi-quantum-well grain boundaries

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