Exchange biasing and low-field magnetoresistance in bilayers

H. Peng, X. Zhang

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Exchange biasing and magnetoresistance (MR) behaviors have been investigated in (Formula presented) bilayers with specially designed interfacial structures. The exchange coupling is found to be strongly related to interfacial structures. Exchange field (Formula presented) decreases as the cooling field (Formula presented) increases at high (Formula presented) region. Especially, the coercivity (Formula presented) is enhanced by exchange coupling for bilayers with rough interface, while it is reduced for relatively smooth interface. Also, large low-field MR has been achieved by introducing regular in-plane grain boundaries, and a biasing of (Formula presented) loop has been observed.

Original languageEnglish (US)
Pages (from-to)8955-8959
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number13
StatePublished - 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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